Design and Fabrication of Optically Activated Silicon Carbide High-Power Switching Devices
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University of Cincinnati / OhioLINK
2001
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ndltd-OhioLink-oai-etd.ohiolink.edu-ucin10071587112021-08-03T06:08:19Z Design and Fabrication of Optically Activated Silicon Carbide High-Power Switching Devices Sukumaran, Deepti Silicon Carbide High-Power Switching Devices The overall goal of this thesis is to design and fabricate optically activated Silicon Carbide high-power switching devices.Fly-by-Light systems that use optical signals to actuate the flight control surfaces of an aircraft have been suggested as a solution to the ElectroMagnetic Interference (EMI) problem in avionic systems. Current fly-by-light systems are limited by the lack of optically activated high-power switching devices. Silicon Carbide is a wide-band gap semiconductor, which offers the potential to overcome both the temperature and voltage blocking limitations of Silicon, due to its high thermal conductivity, high electric breakdown field, high saturated electron drift velocity and a lower intrinsic carrier concentration. In the first part of the thesis 6H-SiC was chosen as the power device material and devices were designed, fabricated and tested. Observations made from this attempt were utilized to recommend revisions in the second attempt. In the second part, 4H-SiC was chosen due to its higher mobility along the vertical axis as compared to 6H-SiC, which makes it preferable as a material for vertical power devices. Besides, many of the electrical properties of 4H-SiC are isotropic in nature. The fabricated device would eventually be integrated into a motor drive current module supplied to the Air Force. Hence it was designed to support a 135 V drive potential and source 150 A current. The fabrication processes for the 4H-SiC devices were discussed. The devices were electrically characterized and inferences were drawn from the results. Finally after discussing both electrical testing and fabrication procedures, optimization techniques were suggested for future attempts. 2001 English text University of Cincinnati / OhioLINK http://rave.ohiolink.edu/etdc/view?acc_num=ucin1007158711 http://rave.ohiolink.edu/etdc/view?acc_num=ucin1007158711 unrestricted This thesis or dissertation is protected by copyright: all rights reserved. It may not be copied or redistributed beyond the terms of applicable copyright laws. |
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NDLTD |
| language |
English |
| sources |
NDLTD |
| topic |
Silicon Carbide High-Power Switching Devices |
| spellingShingle |
Silicon Carbide High-Power Switching Devices Sukumaran, Deepti Design and Fabrication of Optically Activated Silicon Carbide High-Power Switching Devices |
| author |
Sukumaran, Deepti |
| author_facet |
Sukumaran, Deepti |
| author_sort |
Sukumaran, Deepti |
| title |
Design and Fabrication of Optically Activated Silicon Carbide High-Power Switching Devices |
| title_short |
Design and Fabrication of Optically Activated Silicon Carbide High-Power Switching Devices |
| title_full |
Design and Fabrication of Optically Activated Silicon Carbide High-Power Switching Devices |
| title_fullStr |
Design and Fabrication of Optically Activated Silicon Carbide High-Power Switching Devices |
| title_full_unstemmed |
Design and Fabrication of Optically Activated Silicon Carbide High-Power Switching Devices |
| title_sort |
design and fabrication of optically activated silicon carbide high-power switching devices |
| publisher |
University of Cincinnati / OhioLINK |
| publishDate |
2001 |
| url |
http://rave.ohiolink.edu/etdc/view?acc_num=ucin1007158711 |
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AT sukumarandeepti designandfabricationofopticallyactivatedsiliconcarbidehighpowerswitchingdevices |
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1719431550586585088 |