Improved Performance of GaN/AlN Resonant Tunneling Diodes with Current Densities exceeding 1 MA/cm<sup>2</sup>

Improved Performance of GaN/AlN Resonant Tunneling Diodes with Current Densities exceeding 1 MA/cm<sup>2</sup>

Bibliographic Details
Main Author:	Cornuelle, Evan M.
Language:	English
Published:	The Ohio State University / OhioLINK 2021
Subjects:	Electrical Engineering Physics
Online Access:	http://rave.ohiolink.edu/etdc/view?acc_num=osu1614266509580701

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