Improved Performance of GaN/AlN Resonant Tunneling Diodes with Current Densities exceeding 1 MA/cm<sup>2</sup>

Improved Performance of GaN/AlN Resonant Tunneling Diodes with Current Densities exceeding 1 MA/cm<sup>2</sup>

Bibliographic Details
Main Author: Cornuelle, Evan M.
Language:English
Published: The Ohio State University / OhioLINK 2021
Subjects:
Electrical Engineering
Physics
Online Access:http://rave.ohiolink.edu/etdc/view?acc_num=osu1614266509580701
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spelling ndltd-OhioLink-oai-etd.ohiolink.edu-osu16142665095807012021-10-08T05:09:08Z Improved Performance of GaN/AlN Resonant Tunneling Diodes with Current Densities exceeding 1 MA/cm<sup>2</sup> Cornuelle, Evan M. Electrical Engineering Physics Identical GaN/AlN resonant tunneling diode (RTD) structures were grown on free-standing bulk GaN at substrate temperatures of 760 °C, 810 °C, 860 °C, and 900 °C via plasma-assisted molecular-beam-epitaxy (MBE). Each sample displayed negative differential resistance (NDR) at room temperature. The figures-of-merit quantified were peak-to-valley-current-ratio (PVCR), yield of device with room-temperature NDR, and peak current density (Jp). The figures-of-merit demonstrate an inverse relationship between PVCR/yield and Jp over this growth temperature series. X-ray diffraction and transmission electron microscopy were used to determine the growth rates and layer thicknesses used to explain the varying figures-of-merit. Due to the high yield of devices grown at 760 °C and 810 °C: PVCR, peak voltage (Vp), and Jp were plotted versus device area and demonstrated high uniformity and application tunability. Peak current densities of up to 1.01 MA/cm<sup>2</sup> were observed for the sample grown at 900 °C. 2021-10-07 English text The Ohio State University / OhioLINK http://rave.ohiolink.edu/etdc/view?acc_num=osu1614266509580701 http://rave.ohiolink.edu/etdc/view?acc_num=osu1614266509580701 unrestricted This thesis or dissertation is protected by copyright: all rights reserved. It may not be copied or redistributed beyond the terms of applicable copyright laws.
collection NDLTD
language English
sources NDLTD
topic Electrical Engineering
Physics
spellingShingle Electrical Engineering
Physics
Cornuelle, Evan M.
Improved Performance of GaN/AlN Resonant Tunneling Diodes with Current Densities exceeding 1 MA/cm<sup>2</sup>
author Cornuelle, Evan M.
author_facet Cornuelle, Evan M.
author_sort Cornuelle, Evan M.
title Improved Performance of GaN/AlN Resonant Tunneling Diodes with Current Densities exceeding 1 MA/cm<sup>2</sup>
title_short Improved Performance of GaN/AlN Resonant Tunneling Diodes with Current Densities exceeding 1 MA/cm<sup>2</sup>
title_full Improved Performance of GaN/AlN Resonant Tunneling Diodes with Current Densities exceeding 1 MA/cm<sup>2</sup>
title_fullStr Improved Performance of GaN/AlN Resonant Tunneling Diodes with Current Densities exceeding 1 MA/cm<sup>2</sup>
title_full_unstemmed Improved Performance of GaN/AlN Resonant Tunneling Diodes with Current Densities exceeding 1 MA/cm<sup>2</sup>
title_sort improved performance of gan/aln resonant tunneling diodes with current densities exceeding 1 ma/cm<sup>2</sup>
publisher The Ohio State University / OhioLINK
publishDate 2021
url http://rave.ohiolink.edu/etdc/view?acc_num=osu1614266509580701
work_keys_str_mv AT cornuelleevanm improvedperformanceofganalnresonanttunnelingdiodeswithcurrentdensitiesexceeding1macmsup2sup
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