Simulation Studies of High Breakdown-Voltage GaN and β-Ga2O3 Vertical Device
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The Ohio State University / OhioLINK
2019
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| Online Access: | http://rave.ohiolink.edu/etdc/view?acc_num=osu155558352423293 |
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ndltd-OhioLink-oai-etd.ohiolink.edu-osu1555583524232932021-08-03T07:10:29Z Simulation Studies of High Breakdown-Voltage GaN and β-Ga2O3 Vertical Device Meng, Wentao Electrical Engineering Power semiconductor devices are mainly used in power conversion and control circuits in power equipment. The currents in high power devices are usually range from ten to thousands of amps, while the voltages could be up to several hundred volts or even more. Gallium nitride (GaN) and beta phase gallium oxide (β-Ga2O3) represent two important wide bandgap (WBG)/ultra-wide bandgap (UWBG) semiconductors for high power devices. They are featured with wide bandgap, high mobility and high breakdown field. These superior characteristics enable their applications for high breakdown voltage power devices. However, most of actual devices show lower breakdown voltages than predicted values based on the fundamental ideal breakdown field. In this thesis, I have studied and designed vertical power devices using both GaN and β-Ga2O3 materials, with the focus on studying the breakdown mechanisms in these devices. From the simulation results, I find that the peak electric field usually occurs at the edge of the devices. When the voltage is applied, the electric fields at the edges will increase faster and these are the areas breakdown first. Thus, the breakdown voltage is often limited by the breakdown at the device’s periphery. By applying the edge termination structures, the breakdown at the edges can be significantly suppressed and therefore enhance the device breakdown voltage. Edge termination structures have been widely studied in SiC based power devices. In this thesis, I constructed the model of the diode with edge terminations for GaN and β-Ga2O3 vertical devices and studied the effects of the doping concentration, drift layer thickness, and edge termination structures on the distribution of the electric field. The results from this thesis can serve as references for actual device designs and device fabrication. 2019-08-28 English text The Ohio State University / OhioLINK http://rave.ohiolink.edu/etdc/view?acc_num=osu155558352423293 http://rave.ohiolink.edu/etdc/view?acc_num=osu155558352423293 unrestricted This thesis or dissertation is protected by copyright: some rights reserved. It is licensed for use under a Creative Commons license. Specific terms and permissions are available from this document's record in the OhioLINK ETD Center. |
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NDLTD |
| language |
English |
| sources |
NDLTD |
| topic |
Electrical Engineering |
| spellingShingle |
Electrical Engineering Meng, Wentao Simulation Studies of High Breakdown-Voltage GaN and β-Ga2O3 Vertical Device |
| author |
Meng, Wentao |
| author_facet |
Meng, Wentao |
| author_sort |
Meng, Wentao |
| title |
Simulation Studies of High Breakdown-Voltage GaN and β-Ga2O3 Vertical Device |
| title_short |
Simulation Studies of High Breakdown-Voltage GaN and β-Ga2O3 Vertical Device |
| title_full |
Simulation Studies of High Breakdown-Voltage GaN and β-Ga2O3 Vertical Device |
| title_fullStr |
Simulation Studies of High Breakdown-Voltage GaN and β-Ga2O3 Vertical Device |
| title_full_unstemmed |
Simulation Studies of High Breakdown-Voltage GaN and β-Ga2O3 Vertical Device |
| title_sort |
simulation studies of high breakdown-voltage gan and β-ga2o3 vertical device |
| publisher |
The Ohio State University / OhioLINK |
| publishDate |
2019 |
| url |
http://rave.ohiolink.edu/etdc/view?acc_num=osu155558352423293 |
| work_keys_str_mv |
AT mengwentao simulationstudiesofhighbreakdownvoltageganandbga2o3verticaldevice |
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1719455497327738880 |