Design of A Silicon and Wide-Bandgap Device Based Hybrid Switch for Power Electronics Converter

Design of A Silicon and Wide-Bandgap Device Based Hybrid Switch for Power Electronics Converter

Bibliographic Details
Main Author: Deshpande, Amol Rajendrakumar
Language:English
Published: The Ohio State University / OhioLINK 2016
Subjects:
Electrical Engineering
Online Access:http://rave.ohiolink.edu/etdc/view?acc_num=osu1461238625
id ndltd-OhioLink-oai-etd.ohiolink.edu-osu1461238625
record_format oai_dc
spelling ndltd-OhioLink-oai-etd.ohiolink.edu-osu14612386252021-08-03T06:35:59Z Design of A Silicon and Wide-Bandgap Device Based Hybrid Switch for Power Electronics Converter Deshpande, Amol Rajendrakumar Electrical Engineering A high efficiency and high power density power electronics converter would deliver more power at low weight and volume. This is highly desirable for applications such as More Electric Aircrafts. A silicon (Si) IGBT based converter cannot achieve this goal due to limited switching frequency of 20 kHz. On other hand, fast switching wide-bandgap (WBG) devices such as silicon carbide (SiC) MOSFET/JFET or Gallium Nitride (GaN) HEMT cannot directly replace Si IGBT due to limited die sizes and high costs. Thus, a hybrid switch (HyS) with paralleled large Si IGBT die and small WBG die is proposed for hard switching converters. It has inherent low conduction loss. Innovative gate control allows low switching loss and switching frequency as high as 78 kHz in HyS based converters. This proportionally reduces passive components’ size. A parametric study is done to determine a boundary condition for the best gate control option from possible options in the presence of the parasitic interconnect inductance. A Si/WBG die size ratio optimization algorithm is proposed, with this the thermal management system can be further relaxed to achieve the goal of low weight and volume. 2016-09-21 English text The Ohio State University / OhioLINK http://rave.ohiolink.edu/etdc/view?acc_num=osu1461238625 http://rave.ohiolink.edu/etdc/view?acc_num=osu1461238625 unrestricted This thesis or dissertation is protected by copyright: all rights reserved. It may not be copied or redistributed beyond the terms of applicable copyright laws.
collection NDLTD
language English
sources NDLTD
topic Electrical Engineering
spellingShingle Electrical Engineering
Deshpande, Amol Rajendrakumar
Design of A Silicon and Wide-Bandgap Device Based Hybrid Switch for Power Electronics Converter
author Deshpande, Amol Rajendrakumar
author_facet Deshpande, Amol Rajendrakumar
author_sort Deshpande, Amol Rajendrakumar
title Design of A Silicon and Wide-Bandgap Device Based Hybrid Switch for Power Electronics Converter
title_short Design of A Silicon and Wide-Bandgap Device Based Hybrid Switch for Power Electronics Converter
title_full Design of A Silicon and Wide-Bandgap Device Based Hybrid Switch for Power Electronics Converter
title_fullStr Design of A Silicon and Wide-Bandgap Device Based Hybrid Switch for Power Electronics Converter
title_full_unstemmed Design of A Silicon and Wide-Bandgap Device Based Hybrid Switch for Power Electronics Converter
title_sort design of a silicon and wide-bandgap device based hybrid switch for power electronics converter
publisher The Ohio State University / OhioLINK
publishDate 2016
url http://rave.ohiolink.edu/etdc/view?acc_num=osu1461238625
work_keys_str_mv AT deshpandeamolrajendrakumar designofasiliconandwidebandgapdevicebasedhybridswitchforpowerelectronicsconverter
_version_ 1719439953892474880

Similar Items