Cryogenic Irradiation and Low Temperature Annealing of Semiconductor and Optical Materials

Cryogenic Irradiation and Low Temperature Annealing of Semiconductor and Optical Materials

Bibliographic Details
Main Author: Reinke, Benjamin T.
Language:English
Published: The Ohio State University / OhioLINK 2016
Subjects:
Nuclear Engineering
nuclear
radiation
irradiation
semiconductor
GaN
silica
damage
cryogenic
LHe
defect
space
NASA
Ohio State
optical fiber
single-mode
multi-mode
Online Access:http://rave.ohiolink.edu/etdc/view?acc_num=osu1452250518
id ndltd-OhioLink-oai-etd.ohiolink.edu-osu1452250518
record_format oai_dc
spelling ndltd-OhioLink-oai-etd.ohiolink.edu-osu14522505182021-08-03T06:34:36Z Cryogenic Irradiation and Low Temperature Annealing of Semiconductor and Optical Materials Reinke, Benjamin T. Nuclear Engineering nuclear radiation irradiation semiconductor GaN silica damage cryogenic LHe defect space NASA Ohio State optical fiber single-mode multi-mode A Cryogenic Irradiation Facility (CRIF) has been designed, fabricated, and tested for use in the pool of the Ohio State University Research Reactor (OSURR). This CRIF has supported in situ radiation induced damage experiments in optical and electronic materials at cryogenic temperatures and temperature controlled low temperature annealing experiments from cryogenic temperatures to above room temperature. The facility has been tested with liquid nitrogen and liquid helium out of the reactor pool. Temperature control has been demonstrated in the experimental volume of the CRIF from 4.2 K to above room temperature. The 10" Dry Tube, which will house the CRIF in the OSURR pool, has been inserted into OSURR pool and tested. The empty 10" Dry Tube and the CRIF have been simulated in a model of the OSURR using MCNP6 to understand the predicted radiation fields and total energy deposition in the empty 10" Dry Tube and in typical optical and electronic materials in the experimental volume of the CRIF. The radiation fields and the total radiation energy deposition have been used to predict experimental operating parameters for CRIF experiments, based upon desired dose calculations and time to boil-off for the liquid helium inside the CRIF. The CRIF has been used for four sets of experiments on single-mode and multi-mode silica optical fibers, in conjunction with a Luna Optics Optical Backscatter Reflectometer and an optical transmission measurement system, and on GaN High Electron Mobility Transistors, in conjunction with an integrated NI PXI Electronics Measurements System. These four experiments included (1) cryogenic materials characterization experiments without radiation, (2) gamma-only cryogenic irradiation experiments and low temperature annealing experiments, (3) reactor-on mixed field cryogenic irradiation experiments and low temperature annealing experiments, and (4) reactor-on mixed field room temperature irradiation experiments. These experiments were all completed at the OSU Nuclear Reactor Laboratory. The experiments demonstrated varying effects on the materials under test, depending on the temperature of the experiments and the radiation type, dose rate, and total dose of the experiments. The flexibility of the CRIF, in allowing for in situ measurements during cryogenic irradiation periods and during cooling/heating portions of the experiments, was shown to be vital in observing the complicated combined effects of the cryogenic irradiation. 2016-06-09 English text The Ohio State University / OhioLINK http://rave.ohiolink.edu/etdc/view?acc_num=osu1452250518 http://rave.ohiolink.edu/etdc/view?acc_num=osu1452250518 unrestricted This thesis or dissertation is protected by copyright: all rights reserved. It may not be copied or redistributed beyond the terms of applicable copyright laws.
collection NDLTD
language English
sources NDLTD
topic Nuclear Engineering
nuclear
radiation
irradiation
semiconductor
GaN
silica
damage
cryogenic
LHe
defect
space
NASA
Ohio State
optical fiber
single-mode
multi-mode
spellingShingle Nuclear Engineering
nuclear
radiation
irradiation
semiconductor
GaN
silica
damage
cryogenic
LHe
defect
space
NASA
Ohio State
optical fiber
single-mode
multi-mode
Reinke, Benjamin T.
Cryogenic Irradiation and Low Temperature Annealing of Semiconductor and Optical Materials
author Reinke, Benjamin T.
author_facet Reinke, Benjamin T.
author_sort Reinke, Benjamin T.
title Cryogenic Irradiation and Low Temperature Annealing of Semiconductor and Optical Materials
title_short Cryogenic Irradiation and Low Temperature Annealing of Semiconductor and Optical Materials
title_full Cryogenic Irradiation and Low Temperature Annealing of Semiconductor and Optical Materials
title_fullStr Cryogenic Irradiation and Low Temperature Annealing of Semiconductor and Optical Materials
title_full_unstemmed Cryogenic Irradiation and Low Temperature Annealing of Semiconductor and Optical Materials
title_sort cryogenic irradiation and low temperature annealing of semiconductor and optical materials
publisher The Ohio State University / OhioLINK
publishDate 2016
url http://rave.ohiolink.edu/etdc/view?acc_num=osu1452250518
work_keys_str_mv AT reinkebenjamint cryogenicirradiationandlowtemperatureannealingofsemiconductorandopticalmaterials
_version_ 1719439641016270848

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