Charge-Spin Transport Correlation in Local Electrical Spin Injection in Silicon
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2014
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ndltd-OhioLink-oai-etd.ohiolink.edu-osu14177776782021-08-03T06:28:36Z Charge-Spin Transport Correlation in Local Electrical Spin Injection in Silicon Beardsley, Jonas T. Condensed Matter Physics Physics Spintronics Silicon STM BEEM Spintronics (the word is intended to combine “spin” with “electronics”) is the study of spin dependent phenomena in solids, with a concentration on metals, semiconductors, and semiconductor heterostructures. These studies characterize the magnetic, electrical and optical properties of said materials due to the polarization of their spin populations. These fundamental relationships can yield important insights into spin interactions such as spin exchange, spin-orbit, and hyperfine interactions in solids. In a more narrow sense, spintronics refers to the study of spin polarized transport in metals and semiconductors. There are two complimentary methods of this applied spintronics: to manipulate the electronics properties of a system, for example the resistance or charge accumulation, by magnetic field or spin polarization, and to control spin and magnetic properties by electric currents or gate voltages. The ultimate goal of this is to enhance the functionality of conventional, charge based electronics. For example, a spin field effect transistor, which could change its resistance from high to low by changing the orientation of a magnetic field. In theory, these devices can operate more efficiently than those which operate entirely based on charge. This means that using spintronic elements in logic devices may be able to reduce the power usage and heat generation by computation.The study detailed in this work uses local, three terminal spin injection devices to analyze the behavior of spin polarized electrons in silicon. In these devices, a nonequilibrium spin polarization is induced in the silicon by means of a spin polarized charge current injected from a ferromagnetic metal through a tunneling barrier. This spin polarization is manipulated by applying an external magnetic field in a process known as the Hanle effect. The resulting spin polarization is then measured, at the injecting contact, by correlation with the electrical properties of that contact. This method allows us to use the same contact for injection and measurement, and has other salutary effects which I will discuss. I will report measurements and analysis of electrical spin injection and detection in Fe/MgO/Si tunnel diodes using this method. The bias dependencies of the spin-resistance area product and the differential-resistance-area product dVc/dJ are found to be very strong (in contrast to current models) and highly correlated. I will demonstrate that within a standard tunneling model a strongly bias-dependent dVc/dJ requires that the tunneling coefficient must be strongly energy- and/or bias-dependent, which produces a corresponding strong bias dependence in the spin-resistance-area product compared to the magnitude of the actual spin accumulation properties. The data are best explained if the actual spin behavior is only weakly bias-dependent, consistent with the weakly bias-depended measured effective spin lifetime. 2014 English text The Ohio State University / OhioLINK http://rave.ohiolink.edu/etdc/view?acc_num=osu1417777678 http://rave.ohiolink.edu/etdc/view?acc_num=osu1417777678 unrestricted This thesis or dissertation is protected by copyright: some rights reserved. It is licensed for use under a Creative Commons license. Specific terms and permissions are available from this document's record in the OhioLINK ETD Center. |
| collection |
NDLTD |
| language |
English |
| sources |
NDLTD |
| topic |
Condensed Matter Physics Physics Spintronics Silicon STM BEEM |
| spellingShingle |
Condensed Matter Physics Physics Spintronics Silicon STM BEEM Beardsley, Jonas T. Charge-Spin Transport Correlation in Local Electrical Spin Injection in Silicon |
| author |
Beardsley, Jonas T. |
| author_facet |
Beardsley, Jonas T. |
| author_sort |
Beardsley, Jonas T. |
| title |
Charge-Spin Transport Correlation in Local Electrical Spin Injection in Silicon |
| title_short |
Charge-Spin Transport Correlation in Local Electrical Spin Injection in Silicon |
| title_full |
Charge-Spin Transport Correlation in Local Electrical Spin Injection in Silicon |
| title_fullStr |
Charge-Spin Transport Correlation in Local Electrical Spin Injection in Silicon |
| title_full_unstemmed |
Charge-Spin Transport Correlation in Local Electrical Spin Injection in Silicon |
| title_sort |
charge-spin transport correlation in local electrical spin injection in silicon |
| publisher |
The Ohio State University / OhioLINK |
| publishDate |
2014 |
| url |
http://rave.ohiolink.edu/etdc/view?acc_num=osu1417777678 |
| work_keys_str_mv |
AT beardsleyjonast chargespintransportcorrelationinlocalelectricalspininjectioninsilicon |
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1719437445755305984 |