EMI Modeling and Characterization for Ultra-Fast Switching Power Circuit Based on SiC and GaN Devices

EMI Modeling and Characterization for Ultra-Fast Switching Power Circuit Based on SiC and GaN Devices

Bibliographic Details
Main Author:	Tsai, Kaichien
Language:	English
Published:	The Ohio State University / OhioLINK 2013
Subjects:	Electrical Engineering
Online Access:	http://rave.ohiolink.edu/etdc/view?acc_num=osu1385983252

Similar Items

Using GaN Switching Devices for Common Mode EMI Reduction in Power Converters
by: Jhe-yu Lin, et al.
Published: (2017)

SiC and GaN Devices With Cryogenic Cooling
by: Ruirui Chen, et al.
Published: (2021-01-01)

The characterization of AlGaN / GaN high-power transistor device structure in SiC and Si substrate
by: Chang, Hao-Ming, et al.
Published: (2011)

SiC Backside Via Process for GaN RF Power Device Application
by: Chiu, Yi-Ju, et al.
Published: (2015)

Hard Switching Characteristics of SiC and GaN Devices for Future Electric Vehicle Charging Stations
by: Rajendran Gowthamraj, et al.
Published: (2021-01-01)

Growth and characterization of SiC and GaN
by: Ciechonski, Rafal
Published: (2007)

AlGaN/GaN on SiC Devices without a GaN Buffer Layer: Electrical and Noise Characteristics
by: Justinas Jorudas, et al.
Published: (2020-12-01)

Wide bandgap (SiC/GaN) power devices characterization and modeling : application to HF power converters
by: Li, Ke
Published: (2014)

A High-Voltage Low-Power Switched-Capacitor DC-DC Converter Based on GaN and SiC Devices for LED Drivers
by: Lin Fan, et al.
Published: (2018-06-01)

Analysis of Heat Dissipation in AlGaN/GaN HEMT with GaN Micropits at GaN-SiC Interface
Published: (2016)

Reliability Study of GaN-on-SiC HEMT RF Power Amplifiers
by: M. Bakowski, et al.
Published: (2018-07-01)

Study of transformation of defect states in GaN- and SiC-based materials and devices
by: Rigutti, Lorenzo
Published: (2006)

Material Characterization and Device Applications of GaN Epitaxial Layers on Si and SiC Substrates by MOCVD
by: Po-Jung Lin, et al.
Published: (2018)

Modelling of GaN Power Switches
by: Jogi, Sreeram
Published: (2015)

Wide Bandgap Semiconductor (SiC & GaN) Power Amplifiers in Different Classes
by: Azam, Sher
Published: (2008)

Patterned 4H-SiC Substrate for the Epitaxy of GaN
by: Chen,Bo-Lin, et al.
Published: (2016)

CVD solutions for new directions in SiC and GaN epitaxy
by: Li, Xun
Published: (2015)

Effects of Neutron Irradiation on the Optoelectronic Properties of GaN/SiC
by: Ying-Chun Yang, et al.
Published: (2004)

EMI Terminal Behavioral Modeling of SiC-based Power Converters
by: Sun, Bingyao
Published: (2017)

Design and Implementation of Switching Mode Power Converter Using GaN Power Device
by: Hao-Shan Wang, et al.

Analysis of strain in GaN and SiC films by Raman-scattering spectroscopy
by: Pei-Chun Chung, et al.
Published: (2012)

EMI Filtering Technique for a Switching Power Supply Circuit
by: Meng-Chun Chen, et al.
Published: (2009)

A Comparative Study on the Switching Performance of GaN and Si Power Devices for Bipolar Complementary Modulated Converter Legs
by: Baochao Wang, et al.
Published: (2019-03-01)

Growth of GaN Thin Films on Porous SiC/Si and Ceramic Poly-SiC Substrates for UV Detecting Applications
by: Tzu-Chieh Wei, et al.

Evaluation and Reliability Assessment of GaN-on-Si MIS-HEMT for Power Switching Applications
by: Po-Chien Chou, et al.
Published: (2017-02-01)

Evaluation and Reliability Assessment of GaN-on-Si MIS-HEMT for Power Switching Applications
by: Chou, Po-Chien, et al.
Published: (2017)

AlGaN/GaN-based power semiconductor switches
by: Lu, Bin, Ph. D. Massachusetts Institute of Technology
Published: (2013)

Accelerated Tests on Si and SiC Power Transistors with Thermal, Fastand Ultra-Fast Neutrons
by: Fabio Principato, et al.
Published: (2020-05-01)

Interface Charge Engineering in AlGaN/GaN Heterostructures for GaN Power Devices
by: Nakazawa, Satoshi
Published: (2019)

A Temperature Stable Amplifier Characteristics of AlGaN/GaN HEMTs on 3C-SiC/Si
by: Arijit Bose, et al.
Published: (2021-01-01)

The Study of Device Performance and Dynamic Characteristic Improvement for GaN-on-Si High Power Devices
by: Tzou, An-Jye, et al.
Published: (2018)

Current collapse scaling in GaN/AlGaN/SiC high electron mobility transistors
by: D.S. Rawal, et al.
Published: (2019-01-01)

Comparative Performance and Assessment Study of a Current-Fed DC-DC Resonant Converter Combining Si, SiC, and GaN-Based Power Semiconductor Devices
by: Oscar Miguel Rodríguez-Benítez, et al.
Published: (2020-11-01)

GaN-based vertical power devices
by: Zhang, Yuhao, Ph. D. Massachusetts Institute of Technology
Published: (2017)

GaN-on-Si RF Switched Mode Power Amplifiers for Non-Constant Envelope Signals
Published: (2015)

Comprehensive dynamic on-resistance assessments in GaN-on-Si MIS-HEMTs for power switching applications
by: Chou, Po-Chien, et al.
Published: (2020)

A 3.6 GHz Doherty Power Amplifier with a 40 dBm Saturated Output Power using GaN on SiC HEMT Devices
by: Baker, Bryant
Published: (2014)

Three-level GaN inverter with SiC diodes for a possible three-phase high power solution
by: F. Aguilar Vega, et al.
Published: (2019-05-01)

Flyback converter design based on GaN switching and Thermal stress analysis of power device
by: Wun, Jun-Sian, et al.
Published: (2018)

Effect of SiC substrate properties on structural perfection and electrical parameters of AlGaN/GaN layers
by: Kira L. Enisherlova, et al.
Published: (2017-03-01)

Cannot write session to /tmp/vufind_sessions/sess_t2d3ok0hmo29ocpv5a94b954v0