Design, Fabrication, and Characterization of Field-Effect and Impedance Based Biosensors

Design, Fabrication, and Characterization of Field-Effect and Impedance Based Biosensors

Bibliographic Details
Main Author:	Wen, Xuejin
Language:	English
Published:	The Ohio State University / OhioLINK 2011
Subjects:	Engineering field-effect impedance biosensor protein surface modification AlGaN/GaN SOI EIS
Online Access:	http://rave.ohiolink.edu/etdc/view?acc_num=osu1308312352

Similar Items

Processing and characterization of advanced AlGaN/GaN heterojunction effect transistors
by: Lee, Jaesun
Published: (2006)

AlGaN/GaN High Electron Mobility Transistor-Based Biosensor for the Detection of C-Reactive Protein
by: Hee Ho Lee, et al.
Published: (2015-07-01)

Fabrication and Characterization of AlGaN/GaN Heterostructure Devices for Hydrogen Gas Sensing at High Temperature
by: Song, Junghui
Published: (2009)

Caractérisation des effets parasites dans les HEMTs GaN : développement d'un banc de mesure 3ω
by: Avcu, Mustafa
Published: (2014)

Physics-Based TCAD Simulation and Calibration of 600 V GaN/AlGaN/GaN Device Characteristics and Analysis of Interface Traps
by: Yu-Lin Song, et al.
Published: (2021-06-01)

Caractérisation électrique d’hétérostructures AlGaN/GaN pour des applications de puissance
by: Lehmann, Jonathan
Published: (2015)

III-Nitride Optoelectronic Devices: From Ultraviolet Toward Terahertz
by: M. Razeghi
Published: (2011-01-01)

Design, fabrication and characterization of III-nitride PN junction devices
by: Limb, Jae Boum
Published: (2007)

Modélisation et caractérisation de capteurs mécaniques intégrés à base d'hétérostructures A1GaN/GaN pour les environnements hostiles
by: Vittoz, Stéphane
Published: (2011)

Computational Modelling-Based Device Design for Improved mmWave Performance and Linearity of GaN HEMTs
by: Ankit Soni, et al.
Published: (2020-01-01)

A Comprehensive Review of Recent Progress on GaN High Electron Mobility Transistors: Devices, Fabrication and Reliability
by: Fanming Zeng, et al.
Published: (2018-12-01)

Improving Off-State Breakdown Voltage of a Double-Channel AlGaN/GaN HEMT with Air-Bridge Field Plate and Slant Field Plate
by: Yang-Hua Chang, et al.
Published: (2020-01-01)

Thermal Field Analysis for New AlGaN/GaN HEMT With Partial Etched AlGaN Layer
by: Baoxing Duan, et al.
Published: (2020-01-01)

Influence of Growth Polarity Switching on the Optical and Electrical Properties of GaN/AlGaN Nanowire LEDs
by: Anna Reszka, et al.
Published: (2021-12-01)

A Study on the Optimized Ohmic Contact Process of AlGaN/GaN-Si MIS-HEMTs
by: He Guan, et al.
Published: (2021-01-01)

AlGaN/GaN HEMT Topology Investigation Using Measured Data and Device Modeling
by: Langley, Derrick
Published: (2007)

DC, MICROWAVE, AND NOISE PROPERTIES OF GAN BASED HETEROJUNCTION FIELD EFFECT TRANSISTORS AND THEIR RELIABILITY ISSUES
by: Zhu, Congyong
Published: (2013)

Analysis of Low Voltage RF Power Capability on AlGaN/GaN and InAlN/GaN HEMTs for Terminal Applications
by: Yuwei Zhou, et al.
Published: (2021-01-01)

Unidirectional Operation of p-GaN Gate AlGaN/GaN Heterojunction FET Using Rectifying Drain Electrode
by: Tae-Hyeon Kim, et al.
Published: (2021-03-01)

Advances in GaN Crystals and Their Applications
by: Ikai Lo
Published: (2018-03-01)

Multiscale electro-thermal modeling of AlGaN/GaN heterostructure field effect transistors
by: Donmezer, Fatma
Published: (2015)

The Leakage Mechanism of the Package of the AlGaN/GaN Liquid Sensor
by: Hanyuan Zhang, et al.
Published: (2020-04-01)

The Impact of Al<i>x</i>Ga1−<i>x</i>N Back Barrier in AlGaN/GaN High Electron Mobility Transistors (HEMTs) on Si<i>x</i>-Inch MCZ Si Substrate
by: H.Y. Wang, et al.
Published: (2020-06-01)

Influence of AlN and GaN Pulse Ratios in Thermal Atomic Layer Deposited AlGaN on the Electrical Properties of AlGaN/GaN Schottky Diodes
by: Hogyoung Kim, et al.
Published: (2020-05-01)

Hydrogen Sensors Using Nitride-Based Semiconductor Diodes: The Role of Metal/Semiconductor Interfaces
by: Yoshihiro Irokawa
Published: (2011-01-01)

Current-Voltage-Temperature (I-V-T) Characteristics of Schottky-Gate of the Structures AlGaN/GaN HEMTs
by: M. MOSTEFAOUI, et al.
Published: (2014-05-01)

E/D-Mode GaN Inverter on a 150-mm Si Wafer Based on p-GaN Gate E-Mode HEMT Technology
by: Li-Fang Jia, et al.
Published: (2021-05-01)

AlGaN/GaN HEMTs With Thin InGaN Cap Layer for Normally Off Operation
by: Mizutani, T., et al.
Published: (2007)

CERCETĂRI XRD ȘI XPS ALE STRATURILOR DE AlN, AlGaN, GaN DEPUSE PE SILICIU PRIN METODA HVPE
by: Simion RAEVSCHI, et al.
Published: (2018-12-01)

Simulation of AlGaN/GaN HEMTs’ Breakdown Voltage Enhancement Using Gate Field-Plate, Source Field-Plate and Drain Field Plate
by: Biyan Liao, et al.
Published: (2019-04-01)

Analytical Study on the Breakdown Characteristics of Si-Substrated AlGaN/GaN HEMTs With Field Plates
by: Jianhua Liu, et al.
Published: (2020-01-01)

High Figure-of-Merit (<inline-formula> <tex-math notation="LaTeX">${V}_{\text{BR}}^{\text{2}}$ </tex-math></inline-formula>/<inline-formula> <tex-math notation="LaTeX">${R}_{\text{ON}}$ </tex-math></inline-formula>) AlGaN/GaN Power HEMT With Periodically C-Doped GaN Buffer and AlGaN Back Barrier
by: Jun-Hyeok Lee, et al.
Published: (2018-01-01)

AlGaN/GaN MIS-HEMTs With High Quality ALD-Al<sub>2</sub>O<sub>3</sub> Gate Dielectric Using Water and Remote Oxygen Plasma As Oxidants
by: Huan-Chung Wang, et al.
Published: (2018-01-01)

Low-Damage and Self-Limiting (Al)GaN Etching Process through Atomic Layer Etching using O<sub>2</sub> and BCl<sub>3</sub> Plasma
by: Il-Hwan Hwang, et al.
Published: (2021-02-01)

Study of electronic transport parameters on the heterojunction of AlGaN/GaN, grown on Sapphire: two layer model
by: Sanju Shrestha, et al.
Published: (2018-11-01)

Modelling of GaN Power Switches
by: Jogi, Sreeram
Published: (2015)

Innovative sensors using nitride semiconductor materials for the detection of exhaust gases and water pollutants
by: Bishop, Christopher
Published: (2016)

Etude des mécanismes de formation des contacts ohmiques pour des transistors de puissance sur Nitrure de Gallium
by: Bertrand, Dimitri
Published: (2016)

Towards high electron mobility in Gan(0001) based InGaN and AlGaN heterostructures
by: Broxtermann, Daniel
Published: (2011)

Graphene as a Schottky Barrier Contact to AlGaN/GaN Heterostructures
by: Maksym Dub, et al.
Published: (2020-09-01)

Cannot write session to /tmp/vufind_sessions/sess_ui2n6fjrsdobthkntfv4clp1sc