Growth and Strain Relaxation in Anion-Graded GaxIn1-xAsyP1-y
Main Author: | Carlin, Andrew M. |
---|---|
Language: | English |
Published: |
The Ohio State University / OhioLINK
2010
|
Subjects: | |
Online Access: | http://rave.ohiolink.edu/etdc/view?acc_num=osu1282127160 |
Similar Items
-
Photonic and Iontronic Sensing in GaInAsP Semiconductor Photonic Crystal Nanolasers
by: Toshihiko Baba
Published: (2019-06-01) -
OPTICAL PROPERTIES OF EPITAXIAL GaxIn1–xP SOLID SOLUTIONS WITH ATOMIC ORDERING
by: Seredin Pavel V., et al.
Published: (2017-09-01) -
ATOMIC ORDERING IN SOLID SOLUTIONS GaxIn1-xP: EXPERIMENTAL STUDY OF THE STRUCTURAL AND MORPHOLOGICAL PROPERTIES
by: SeredinPavel V., et al.
Published: (2017-06-01) -
The Effect of Buffer Types on the In0.82Ga0.18As Epitaxial Layer Grown on an InP (100) Substrate
by: Min Zhang, et al.
Published: (2018-06-01) -
Science and applications of III-V graded anion metamorphic buffers on INP substrates
by: Lin, Yong
Published: (2007)