Growth and Strain Relaxation in Anion-Graded GaxIn1-xAsyP1-y
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The Ohio State University / OhioLINK
2010
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| Online Access: | http://rave.ohiolink.edu/etdc/view?acc_num=osu1282127160 |
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ndltd-OhioLink-oai-etd.ohiolink.edu-osu12821271602021-08-03T06:00:31Z Growth and Strain Relaxation in Anion-Graded GaxIn1-xAsyP1-y Carlin, Andrew M. Electrical Engineering Engineering Materials Science anion graded buffer GaInAsP The limitations of growth on traditionally available GaAs and InP substrates significantly limits the accessible materials properties available for device applications. For instance, current III/V commercial solar technology is entirely focused on growth at the GaAs/Ge lattice constant. Theoretical simulations show that movement towards a slightly larger lattice constant, between GaAs and InP, would make more efficient use of the solar spectrum. The ability to tailor ones band profile, and other materials properties to a specific application, such as solar cells or transistors, has been a goal of semiconductor research for many years. However, the complexities of lattice mismatched epitaxy and the defects introduced during metamorphic grading has slowed progress in this area.This thesis will focus on the use of quaternary GaxIn1-xAsyP1-y as a metamorphic material to move towards lattice constants greater than GaAs. The first step in this process is to explore the growth regime of GaxIn1-xAsyP1-y with focus on the achievement of a streaky 2x4 reflection high energy electron diffraction pattern. From here, exploration of the lattice relaxation properties via high resolution x-ray diffraction and transmission electron microscopy will be carried out. Finally, the source of and ramifications of short scale phase decomposition of this material will be explored. 2010-10-29 English text The Ohio State University / OhioLINK http://rave.ohiolink.edu/etdc/view?acc_num=osu1282127160 http://rave.ohiolink.edu/etdc/view?acc_num=osu1282127160 unrestricted This thesis or dissertation is protected by copyright: all rights reserved. It may not be copied or redistributed beyond the terms of applicable copyright laws. |
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NDLTD |
| language |
English |
| sources |
NDLTD |
| topic |
Electrical Engineering Engineering Materials Science anion graded buffer GaInAsP |
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Electrical Engineering Engineering Materials Science anion graded buffer GaInAsP Carlin, Andrew M. Growth and Strain Relaxation in Anion-Graded GaxIn1-xAsyP1-y |
| author |
Carlin, Andrew M. |
| author_facet |
Carlin, Andrew M. |
| author_sort |
Carlin, Andrew M. |
| title |
Growth and Strain Relaxation in Anion-Graded GaxIn1-xAsyP1-y |
| title_short |
Growth and Strain Relaxation in Anion-Graded GaxIn1-xAsyP1-y |
| title_full |
Growth and Strain Relaxation in Anion-Graded GaxIn1-xAsyP1-y |
| title_fullStr |
Growth and Strain Relaxation in Anion-Graded GaxIn1-xAsyP1-y |
| title_full_unstemmed |
Growth and Strain Relaxation in Anion-Graded GaxIn1-xAsyP1-y |
| title_sort |
growth and strain relaxation in anion-graded gaxin1-xasyp1-y |
| publisher |
The Ohio State University / OhioLINK |
| publishDate |
2010 |
| url |
http://rave.ohiolink.edu/etdc/view?acc_num=osu1282127160 |
| work_keys_str_mv |
AT carlinandrewm growthandstrainrelaxationinaniongradedgaxin1xasyp1y |
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1719429317631410176 |