Qualitative and Quantative Characterization of Trapping Effects in AlGaN/GaN High Electron Mobility Transistors

Qualitative and Quantative Characterization of Trapping Effects in AlGaN/GaN High Electron Mobility Transistors

Bibliographic Details
Main Author:	Kim, Hyeong Nam
Language:	English
Published:	The Ohio State University / OhioLINK 2009
Subjects:	Electrical Engineering AlGaN/GaN HEMT trapping effects electron trapping HEMT model device parameter extraction drift velocity
Online Access:	http://rave.ohiolink.edu/etdc/view?acc_num=osu1250612796

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