Monolithic integration of III-V optoelectronics on SI

Monolithic integration of III-V optoelectronics on SI

Bibliographic Details
Main Author: Kwon, Ojin
Language:English
Published: The Ohio State University / OhioLINK 2005
Subjects:
III/V on Si
SiGe
Metamorphic
Monolithic Integration
AlGaInP
Visible LED
Visible LD
Online Access:http://rave.ohiolink.edu/etdc/view?acc_num=osu1124192126
id ndltd-OhioLink-oai-etd.ohiolink.edu-osu1124192126
record_format oai_dc
spelling ndltd-OhioLink-oai-etd.ohiolink.edu-osu11241921262021-08-03T05:50:17Z Monolithic integration of III-V optoelectronics on SI Kwon, Ojin III/V on Si SiGe Metamorphic Monolithic Integration AlGaInP Visible LED Visible LD Integration of III-V materials on Si substrates has been a driving force in the area of lattice-mismatched growth to selectively provide the complementary material properties of compound semiconductors within conventional Si technology. This materials integration potentially serves as a novel host for next generation technologies to maintain the current rate of progress in data speed and capacity. There are barriers present to integrate III-V materials to Si such as mismatches in lattice constant (for example, 4 % between GaAs and Si, 8 % for InP), crystal symmetry (polar vs. non-polar), thermal characteristics (typically over 250 % thermal expansion coefficient difference between III-V materials and Si), and chemistry. Extensive efforts have focused on achieving successful integration of III-As materials (mainly GaAs/AlGaAs) on Si via heteroepitaxy, while advances in materials integration led state-of-the-art device performance by leveraging heteroepitaxial versatility to tailor material properties among compound III-V materials. Recent progress on graded SiGe relaxed buffers produced successful results with low threading dislocation density of ~ 1 × 10 <sup>6</sup> cm <sup>-2</sup> achieved for the relaxed Ge over large area Si wafers, consequently leading to outstanding device-quality GaAs materials grown on Si and high-performance optoelectronic devices. However, optoelectronic devices emitting in the visible portion of the spectrum have yet to be explored using this promising approach. The present work explores the untapped opportunities of integrated III-P materials on Si enabled by relaxed SiGe/Si, therefore verifying the concept of SiGe/Si that is broadly applicable for monolithically integrating optical and electronic technologies at the wafer level. One of the ultimate proofs for examining the quality of the materials being integrated is a demonstration of the stimulated emission. The generation of coherent light originates from interaction between photons and population-inverted minority carriers; therefore the epitaxial defects from the integration process are extremely critical. To date, the optical coherency of integrated III-P/Si materials in the visible spectrum have yet to be explored and there have been no reports made to achieve this goal by any means of heteroepitaxial integrations. This thesis reviews efforts toward achieving room temperature operating visible AlGaInP laser diodes grown on the relaxed SiGe/Si substrates by molecular beam epitaxy. 2005-08-24 English text The Ohio State University / OhioLINK http://rave.ohiolink.edu/etdc/view?acc_num=osu1124192126 http://rave.ohiolink.edu/etdc/view?acc_num=osu1124192126 unrestricted This thesis or dissertation is protected by copyright: all rights reserved. It may not be copied or redistributed beyond the terms of applicable copyright laws.
collection NDLTD
language English
sources NDLTD
topic III/V on Si
SiGe
Metamorphic
Monolithic Integration
AlGaInP
Visible LED
Visible LD
spellingShingle III/V on Si
SiGe
Metamorphic
Monolithic Integration
AlGaInP
Visible LED
Visible LD
Kwon, Ojin
Monolithic integration of III-V optoelectronics on SI
author Kwon, Ojin
author_facet Kwon, Ojin
author_sort Kwon, Ojin
title Monolithic integration of III-V optoelectronics on SI
title_short Monolithic integration of III-V optoelectronics on SI
title_full Monolithic integration of III-V optoelectronics on SI
title_fullStr Monolithic integration of III-V optoelectronics on SI
title_full_unstemmed Monolithic integration of III-V optoelectronics on SI
title_sort monolithic integration of iii-v optoelectronics on si
publisher The Ohio State University / OhioLINK
publishDate 2005
url http://rave.ohiolink.edu/etdc/view?acc_num=osu1124192126
work_keys_str_mv AT kwonojin monolithicintegrationofiiivoptoelectronicsonsi
_version_ 1719426326094413824

Similar Items