Metal Contacts to Silicon Carbide and Gallium Nitride Studied with Ballistic Electron Emission Microscopy

Metal Contacts to Silicon Carbide and Gallium Nitride Studied with Ballistic Electron Emission Microscopy

Bibliographic Details
Main Author:	Im, Hsung J.
Language:	English
Published:	The Ohio State University / OhioLINK 2001
Subjects:	BEEM diode Schottky SBH STM/BEEM BHD Pd/SiC
Online Access:	http://rave.ohiolink.edu/etdc/view?acc_num=osu1000844302

Similar Items

Ambipolar Ballistic Electron Emission Microscopy Studies of Gate-field Modified Schottky Barriers
by: Che, Yulu
Published: (2010)

Microscopie tunnel à électrons balistiques: vers le Magnétisme
by: Caud, Francois
Published: (2006)

Ultra low signals in ballistic electron emission microscopy
by: Heller, Eric
Published: (2003)

Charge-Spin Transport Correlation in Local Electrical Spin Injection in Silicon
by: Beardsley, Jonas T.
Published: (2014)

Modeling of ballistic electron emission microscopy
by: Claveau, Yann
Published: (2014)

Ballistic Electron Emission Microscopy and Internal Photoemission Study on Metal Bi-layer/Oxide/Si, High-<i>k</i> Oxide/Si, and “End-on” Metal Contacts to Vertical Si Nanowires
by: Cai, Wei
Published: (2010)

Étude des propriétés électroniques et de transport multi-échelle de jonctions tunnel Au/Alcanethiols/n-GaAs(001)
by: Junay, Alexandra
Published: (2015)

Metal contacts to silicon carbide and gallium nitride studied with ballistic electron emission microscopy /
by: Im, Hsung Jai
Published: (2002)

Microscopie à Emission d'Electrons Balistiques (BEEM): étude des propriétés électroniques locales d'hétérostructures
by: Guézo, Sophie
Published: (2009)

Manufacturing technology for contacts to silicon carbide
by: Kudryk Ya.Ya., et al.
Published: (2013-02-01)

Static and Dynamic Characterization of Silicon Carbide and Gallium Nitride Power Semiconductors
by: Romero, Amy Marie
Published: (2019)

The Properties of SiC Barrier Diodes Fabricated with Ti Schottky Contacts
by: Kundeti, Krishna Chaitanya
Published: (2017)

Diodos schottky de SiC para uso como detectores de energia de partículas carregadas
by: Kaufmann, Ivan Rodrigo
Published: (2017)

Diodos schottky de SiC para uso como detectores de energia de partículas carregadas
by: Kaufmann, Ivan Rodrigo
Published: (2017)

Diodos schottky de SiC para uso como detectores de energia de partículas carregadas
by: Kaufmann, Ivan Rodrigo
Published: (2017)

A Simple Method to Validate Power Loss in Medium Voltage SiC MOSFETs and Schottky Diodes Operating in a Three-Phase Inverter
by: Jacek Rąbkowski, et al.
Published: (2020-09-01)

Graphene on SiC(0001) inspected by dynamic atomic force microscopy at room temperature
by: Mykola Telychko, et al.
Published: (2015-04-01)

Characterization and modeling of silicon and silicon carbide power devices
by: Yang, Nanying
Published: (2014)

Development of a Silicon Carbide Schottky Diode Detector for Use in Determining Actinide Inventories based on Alpha Particle Spectroscopy
by: Zelaski, Alexandra R.
Published: (2011)

Transport dépendant du spin d'électrons chauds et imagerie magnétique à l'échelle nanométrique de structures métal/silicium
by: Kaidatzis, Andreas
Published: (2008)

TEM studies of PtSi low Schottky-barrier contacts for source/drain in MOS transistors
by: Łaszcz Adam, et al.
Published: (2011-04-01)

The Fabrication and Characterization of Ni/4H-SiC Schottky Diode Radiation Detectors with a Sensitive Area of up to 4 cm2
by: Lin-Yue Liu, et al.
Published: (2017-10-01)

Estimation of power dissipation of a 4H-SiC Schottky barrier diode with a linearly graded doping profile in the drift region
by: Rajneesh Talwar
Published: (2009-09-01)

Monolayer graphene/SiC Schottky barrier diodes with improved barrier height uniformity as a sensing platform for the detection of heavy metals
by: Ivan Shtepliuk, et al.
Published: (2016-11-01)

Studies on Silicon Carbide: Heteroepitaxy on Silicon and Titanium Alloy Ohmic Contacts
by: Li, Changrong
Published: (2009)

Catalytic Oxidation of Methane using Single Crystal Silicon Carbide
by: Gopalkrishna, Akshoy
Published: (2003)

60–700 K CTAT and PTAT Temperature Sensors with 4H-SiC Schottky Diodes
by: Razvan Pascu, et al.
Published: (2021-01-01)

Influence of Gas Annealing on Sensitivity of AlN/4H-Sic-Based Temperature Sensors
by: Seung-Woo Jung, et al.
Published: (2021-02-01)

Superconductivity in carrier-doped silicon carbide
by: Takahiro Muranaka, Yoshitake Kikuchi, Taku Yoshizawa, Naoki Shirakawa and Jun Akimitsu
Published: (2008-01-01)

Design, intégration technologique et caractérisation d'architectures de diodes JBS en carbure de silicium
by: Biscarrat, Jérôme
Published: (2015)

The liquid phase sintering of silicon carbide
by: Dransfield, G. P.
Published: (1988)

Superconductivity in heavily boron-doped silicon carbide
by: Markus Kriener, Takahiro Muranaka, Junya Kato, Zhi-An Ren, Jun Akimitsu and Yoshiteru Maeno
Published: (2008-01-01)

Morphology Evolution of Nanoscale-Thick Au/Pd Bimetallic Films on Silicon Carbide Substrate
by: Francesco Ruffino, et al.
Published: (2020-04-01)

A Comparative Study of Silicon Carbide Merged PiN Schottky Diodes with Electrical-Thermal Coupled Considerations
by: Jiupeng Wu, et al.
Published: (2020-06-01)

High-Performance Temperature Sensors Based on Dual 4H-SiC JBS and SBD Devices
by: Seong-Ji Min, et al.
Published: (2020-01-01)

SiC Schottky Diodes and Polyphase Buck Converters
by: Galigekere, Veda Prakash N.
Published: (2007)

Improved SiC Schottky Barrier Diodes Using Refractory Metal Borides
by: Kummari, Rani S.
Published: (2009)

Photovoltaic Behavior of V<sub>2</sub>O<sub>5</sub>/4H-SiC Schottky Diodes for Cryogenic Applications
by: Luigi Di Benedetto, et al.
Published: (2015-01-01)

High Temperature Characterization and Analysis of Silicon Carbide (SiC) Power Semiconductor Transistors
by: DiMarino, Christina Marie
Published: (2017)

Synthesis and characterisation of Cf/SiC composites with modified silicon carbide matrix
by: M. Rizvan Basha, et al.
Published: (2021-10-01)