Radiation Effects in Silicon Carbide (SiC) Micro/Nanoelectromechanical Systems (M/NEMS)

Radiation Effects in Silicon Carbide (SiC) Micro/Nanoelectromechanical Systems (M/NEMS)

Bibliographic Details
Main Author:	Chen, Hailong
Language:	English
Published:	Case Western Reserve University School of Graduate Studies / OhioLINK 2020
Subjects:	Physics Electrical Engineering Aerospace Engineering Mechanical Engineering radiation effects silicon carbide microelectromechanical systems nanoelectromechanical systems
Online Access:	http://rave.ohiolink.edu/etdc/view?acc_num=case1576966872894631

Similar Items

Progresses in Synthesis and Application of SiC Films: From CVD to ALD and from MEMS to NEMS
by: Mariana Fraga, et al.
Published: (2020-08-01)

Silicon Carbide (SiC) Nanoelectromechanical Antifuse for Ultralow-Power One-Time-Programmable (OTP) FPGA Interconnects
by: Tina He, et al.
Published: (2015-01-01)

A roadmap towards NanoElectroMechanical systems
by: Terblanche, Eugene
Published: (2009)

Performance Analysis of Nanoelectromechanical Relay-Based Field-Programmable Gate Arrays
by: Tian Qin, et al.
Published: (2018-01-01)

Aspects of the silicon carbide filament - silicon interface /
by: Godard, Hilary Tony
Published: (1987)

OPTICAL PROPERTIES OF RADIATION DAMAGED SILICON-CARBIDE
by: Ballart, Ralph
Published: (1980)

Performance Limits of Nanoelectromechanical Switches (NEMS)-Based Adiabatic Logic Circuits
by: Samer Houri, et al.
Published: (2013-12-01)

Vapor synthesis of silicon and silicon carbide powders /
by: Wu, Huann-Der
Published: (1987)

Gaseous corrosion of silicon carbide and silicon nitride in hydrogen /
by: Kim, Hyoun-Ee
Published: (1987)

Silicon carbide RF-MEM resonators
by: Dusatko, Tomas A.
Published: (2006)

Aero-Thermal Characterization Of Silicon Carbide Flexible Tps Using A 30kw Icp Torch
by: Owens, Walten
Published: (2015)

Nanoelectromechanical Switches for Low-Power Digital Computing
by: Alexis Peschot, et al.
Published: (2015-08-01)

Indirect rapid manufacturing of silicon carbide composites
by: Evans, Robert Scott
Published: (2008)

SiCILIA—Silicon Carbide Detectors for Intense Luminosity Investigations and Applications
by: Salvatore Tudisco, et al.
Published: (2018-07-01)

Investigation of Nonlinearities in Graphene Based NEMS
by: Parmar, Marsha Mary
Published: (2017)

Technology roadmap for development of SiC sensors at plasma processes laboratory
by: Mariana Amorim Fraga, et al.
Published: (2010-08-01)

A Three-dimensional Direct Simulation Monte Carlo Methodology on Unstructured Delaunay Grids with Applications to Micro and Nanoflows
by: Chamberlin, Ryan Earl
Published: (2007)

Silicon carbide (SiC) membranes in œnology: a laboratory-scale study
by: Mathilda Trevisan, et al.
Published: (2020-10-01)

Correlating the microstructure with wear properties of aluminium silicon carbides
by: Jammula, Chaitanya Krishna
Published: (2019)

Point Defects in Silicon and Silicon-Carbide
by: Pellegrino, Paolo
Published: (2001)

Process development for a silicon carbide micro four-point probe
by: Choudhury, Arnab
Published: (2005)

Evaluation of Metal Printing and Cleanroom Fabricated SiC and Ga2O3 Radiation Sensors
by: Taylor, Neil Rutger
Published: (2021)

Frequency Tuning of Graphene Nanoelectromechanical Resonators via Electrostatic Gating
by: Tengda Mei, et al.
Published: (2018-06-01)

Swelling of radiation-cured polymer precursor powder for silicon carbide by pyrolysis
by: Akinori Takeyama, et al.
Published: (2015-12-01)

Ohmic contact to silicon carbide
by: Frick, James Albert, 1933-
Published: (1972)

SiC JFET Device Modeling
by: Tian, David
Published: (2011)

Influence of microwave radiation on relaxation processes in silicon carbide
by: Yu.Yu. Bacherikov, et al.
Published: (2020-06-01)

The Vertical and Adiabatic Ionization Energies of Silicon Carbide Clusters, (SiC)n, With n = 1–12
by: David Gobrecht
Published: (2021-05-01)

Silicon Carbide High Temperature Logic
by: Lee, Te-Hao
Published: (2011)

Depth Profile Analysis of Deep Level Defects in 4H-SiC Introduced by Radiation
by: Tomislav Brodar, et al.
Published: (2020-09-01)

Device Design Guideline for HfO₂-Based Ferroelectric-Gated Nanoelectromechanical System
by: Chankeun Yoon, et al.
Published: (2020-01-01)

Temperature Dependent Qualities of Amorphous Silicon and Amorphous Silicon Carbide Passivating Stacks
Published: (2016)

Review: Electrostatically actuated nanobeam-based nanoelectromechanical switches – materials solutions and operational conditions
by: Liga Jasulaneca, et al.
Published: (2018-01-01)

Energy Dissipation in Graphene Mechanical Resonators with and without Free Edges
by: Makoto Takamura, et al.
Published: (2016-09-01)

Sintesis dan Karakterisasi Silicon Carbide (SiC) dari Sekam Padi Menggunakan Metode Reduksi Magnesiotermik
by: Ahmad Sofyan Sulaeman, et al.
Published: (2019-01-01)

Response of 4H-SiC Detectors to Ionizing Particles
by: Robert Bernat, et al.
Published: (2021-12-01)

Multi-terminal nano-electronic device simulations with atomistic details
by: Koo, Siu-kong, et al.
Published: (2014)

Radiation Hardness of 4H-SiC Devices and Circuits
by: Suvanam, Sethu Saveda
Published: (2017)

4H-SiC Schottky Barrier Diodes for Efficient Thermal Neutron Detection
by: Robert Bernat, et al.
Published: (2021-09-01)

Indentation Size Effect on the Hardness of Silicon Carbide Ceramics
by: .Grilec, K:, et al.
Published: (2010-10-01)

Cannot write session to /tmp/vufind_sessions/sess_ic2ht5p3hpcor02abbmr3gc4ih