Growth, Characterization and Device Demonstration of Ultra-Wide Bandgap ß-Ga<sub>2</sub>O<sub>3</sub> by Low Pressure Chemical Vapor Deposition
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Case Western Reserve University School of Graduate Studies / OhioLINK
2018
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| Online Access: | http://rave.ohiolink.edu/etdc/view?acc_num=case1512652677980762 |
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ndltd-OhioLink-oai-etd.ohiolink.edu-case15126526779807622021-08-03T07:04:56Z Growth, Characterization and Device Demonstration of Ultra-Wide Bandgap ß-Ga<sub>2</sub>O<sub>3</sub> by Low Pressure Chemical Vapor Deposition Rafique, Subrina Electrical Engineering <p>High power semiconductor device technology has significant impact on the society as they can directly contribute to worldwide energy conservation. The main market segments for high-power, high-frequency semiconductor devices are industrial motors, hybrid and electric vehicles, RF and power supply, wireless infrastructure and broadcast and communication satellites. Si-based technology has been serving the power electronics market till today. However, Si based power devices are approaching their theoretical performance limits from the viewpoint of material properties. Wide bandgap (WBG) semiconductors featured with higher breakdown electric field have tremendous advantages over existing Si based technology. They can operate at higher voltages, temperatures and switching frequencies with greater efficiencies resulting in less loss. They also enable significantly reduced system level volumes due to decreased cooling requirements and smaller passive components contributing to overall lower system costs. Once widely used, wide bandgap semiconductor based power electronics technologies can save over 25% of the worldwide annual energy consumption.</p><p>Ultra-wide bandgap (UWBG) semiconductor material gallium oxide (Ga<sub>2</sub>O<sub>3</sub>) with a room temperature bandgap of ~4.9 eV, much higher than GaN (E<sub>g</sub>~3.4 eV) and SiC (E<sub>g</sub>~3.2 eV), is a promising candidate for next generation power devices and deep ultraviolet (DUV) photodetectors (PDs). It possesses excellent material properties and outstanding chemical and thermal stability at elevated temperatures. Most attractively, Ga<sub>2</sub>O<sub>3</sub> substrate can be produced by low cost and scalable melting based methods. In this dissertation, a new epitaxial method based on low pressure chemical vapor deposition (LPCVD) is developed and demonstrated for the first time to grow high quality Ga<sub>2</sub>O<sub>3</sub> based thin films and nanomaterials with fast growth rate and controllable doping. For the LPCVD growth of Ga<sub>2</sub>O<sub>3</sub>, argon (Ar) is employed as carrier gas. High purity gallium pellets (Alfa Aesar, 99.99999%) are used as the group III precursor. Oxygen (O<sub>2</sub>) and Silicon Tetrachloride (SiCl<sub>4</sub>) are the group VI precursor and n-dopant source, respectively. Proof of concept prototypes of ß-Ga<sub>2</sub>O<sub>3</sub> thin films based PDs and Schottky barrier diode (SBD) have been demonstrated using LPCVD grown Ga<sub>2</sub>O<sub>3</sub> thin films. The maximum room temperature electron Hall mobility achieved for LPCVD heteroepitaxial Ga<sub>2</sub>O<sub>3</sub> thin films is 106.6 cm<sup>2</sup>/V·s with an n-type carrier concentration of 4.83x10<sup>17</sup> cm<sup>-3</sup>. The room temperature carrier concentrations achieved so far for the (010) and (001) LPCVD homoepitaxial thin films are ~1.4x10<sup>18</sup> cm<sup>-3</sup> and ~6.6x10<sup>17</sup> cm<sup>-3</sup> with mobilities of ~72 cm<sup>2</sup>/V. s and ~42 cm<sup>2</sup>/V. s respectively. Advancement of LPCVD growth of high quality ß-Ga<sub>2</sub>O<sub>3</sub> will open up new opportunities for high performance power electronic and optoelectronic devices.</p> 2018-02-01 English text Case Western Reserve University School of Graduate Studies / OhioLINK http://rave.ohiolink.edu/etdc/view?acc_num=case1512652677980762 http://rave.ohiolink.edu/etdc/view?acc_num=case1512652677980762 unrestricted This thesis or dissertation is protected by copyright: all rights reserved. It may not be copied or redistributed beyond the terms of applicable copyright laws. |
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NDLTD |
| language |
English |
| sources |
NDLTD |
| topic |
Electrical Engineering |
| spellingShingle |
Electrical Engineering Rafique, Subrina Growth, Characterization and Device Demonstration of Ultra-Wide Bandgap ß-Ga<sub>2</sub>O<sub>3</sub> by Low Pressure Chemical Vapor Deposition |
| author |
Rafique, Subrina |
| author_facet |
Rafique, Subrina |
| author_sort |
Rafique, Subrina |
| title |
Growth, Characterization and Device Demonstration of Ultra-Wide Bandgap ß-Ga<sub>2</sub>O<sub>3</sub> by Low Pressure Chemical Vapor Deposition |
| title_short |
Growth, Characterization and Device Demonstration of Ultra-Wide Bandgap ß-Ga<sub>2</sub>O<sub>3</sub> by Low Pressure Chemical Vapor Deposition |
| title_full |
Growth, Characterization and Device Demonstration of Ultra-Wide Bandgap ß-Ga<sub>2</sub>O<sub>3</sub> by Low Pressure Chemical Vapor Deposition |
| title_fullStr |
Growth, Characterization and Device Demonstration of Ultra-Wide Bandgap ß-Ga<sub>2</sub>O<sub>3</sub> by Low Pressure Chemical Vapor Deposition |
| title_full_unstemmed |
Growth, Characterization and Device Demonstration of Ultra-Wide Bandgap ß-Ga<sub>2</sub>O<sub>3</sub> by Low Pressure Chemical Vapor Deposition |
| title_sort |
growth, characterization and device demonstration of ultra-wide bandgap ß-ga<sub>2</sub>o<sub>3</sub> by low pressure chemical vapor deposition |
| publisher |
Case Western Reserve University School of Graduate Studies / OhioLINK |
| publishDate |
2018 |
| url |
http://rave.ohiolink.edu/etdc/view?acc_num=case1512652677980762 |
| work_keys_str_mv |
AT rafiquesubrina growthcharacterizationanddevicedemonstrationofultrawidebandgapßgasub2subosub3subbylowpressurechemicalvapordeposition |
| _version_ |
1719453029705449472 |