PHYSICAL AND CHEMICAL PROPERTIES OF AMBIENT TEMPERATURE SPUTTERED SILICON CARBIDE FILMS

Bibliographic Details
Main Author:	Shelberg, Daniel Thomas
Language:	English
Published:	Case Western Reserve University School of Graduate Studies / OhioLINK 2010
Subjects:	Chemical Engineering SiC silicon carbide sputtering ambient temperature diffusion moisture thin film
Online Access:	http://rave.ohiolink.edu/etdc/view?acc_num=case1269963941

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spelling	ndltd-OhioLink-oai-etd.ohiolink.edu-case12699639412021-08-03T05:33:33Z PHYSICAL AND CHEMICAL PROPERTIES OF AMBIENT TEMPERATURE SPUTTERED SILICON CARBIDE FILMS Shelberg, Daniel Thomas Chemical Engineering SiC silicon carbide sputtering ambient temperature diffusion moisture thin film Silicon carbide is known for its hardness, chemical resistance, andmoisture barrier properties. This study demonstrates the effectiveness of siliconcarbide films deposited at ambient temperatures. Nanometer scale films showedexcellent moisture resistance due to a small diffusion coefficient. Theydemonstrated high hardness which indicates favorable wear resistance.Chemical resistance was found to be particularly good at room temperature, andhigher temperature tests revealed the possibility of engineering better films. Thefilms have been shown to be extremely flexible, smooth, and pinhole free.Therefore, nanometer scale silicon carbide films have exceptionally goodproperties for use as a protective coating in electronic devices. 2010-05-17 English text Case Western Reserve University School of Graduate Studies / OhioLINK http://rave.ohiolink.edu/etdc/view?acc_num=case1269963941 http://rave.ohiolink.edu/etdc/view?acc_num=case1269963941 unrestricted This thesis or dissertation is protected by copyright: all rights reserved. It may not be copied or redistributed beyond the terms of applicable copyright laws.
collection	NDLTD
language	English
sources	NDLTD
topic	Chemical Engineering SiC silicon carbide sputtering ambient temperature diffusion moisture thin film
spellingShingle	Chemical Engineering SiC silicon carbide sputtering ambient temperature diffusion moisture thin film Shelberg, Daniel Thomas PHYSICAL AND CHEMICAL PROPERTIES OF AMBIENT TEMPERATURE SPUTTERED SILICON CARBIDE FILMS
author	Shelberg, Daniel Thomas
author_facet	Shelberg, Daniel Thomas
author_sort	Shelberg, Daniel Thomas
title	PHYSICAL AND CHEMICAL PROPERTIES OF AMBIENT TEMPERATURE SPUTTERED SILICON CARBIDE FILMS
title_short	PHYSICAL AND CHEMICAL PROPERTIES OF AMBIENT TEMPERATURE SPUTTERED SILICON CARBIDE FILMS
title_full	PHYSICAL AND CHEMICAL PROPERTIES OF AMBIENT TEMPERATURE SPUTTERED SILICON CARBIDE FILMS
title_fullStr	PHYSICAL AND CHEMICAL PROPERTIES OF AMBIENT TEMPERATURE SPUTTERED SILICON CARBIDE FILMS
title_full_unstemmed	PHYSICAL AND CHEMICAL PROPERTIES OF AMBIENT TEMPERATURE SPUTTERED SILICON CARBIDE FILMS
title_sort	physical and chemical properties of ambient temperature sputtered silicon carbide films
publisher	Case Western Reserve University School of Graduate Studies / OhioLINK
publishDate	2010
url	http://rave.ohiolink.edu/etdc/view?acc_num=case1269963941
work_keys_str_mv	AT shelbergdanielthomas physicalandchemicalpropertiesofambienttemperaturesputteredsiliconcarbidefilms
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PHYSICAL AND CHEMICAL PROPERTIES OF AMBIENT TEMPERATURE SPUTTERED SILICON CARBIDE FILMS

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