Atomic layer deposition of nanolaminate high-κ gate dielectrics for amorphous-oxide semiconductor thin film transistors

Nanolaminate dielectrics combine two or more insulating materials in a many-layered film. These structures can be made to significantly outperform films composed of a single one of their constituent materials by adjusting the composition ratio, arrangement, and size of the component layers. In this...

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Main Author:	Triska, Joshua B.
Other Authors:	Conley, John F. Jr
Language:	en_US
Published:	2011
Subjects:	Atomic layer deposition Amorphous oxide semiconductor Dielectric Thin film transistor Amorphous semiconductors Thin film transistors Dielectrics Nanostructured materials
Online Access:	http://hdl.handle.net/1957/21720

id	ndltd-ORGSU-oai-ir.library.oregonstate.edu-1957-21720
record_format	oai_dc
spelling	ndltd-ORGSU-oai-ir.library.oregonstate.edu-1957-217202012-03-21T22:50:41ZAtomic layer deposition of nanolaminate high-κ gate dielectrics for amorphous-oxide semiconductor thin film transistorsTriska, Joshua B.Atomic layer depositionAmorphous oxide semiconductorDielectricThin film transistorAmorphous semiconductorsThin film transistorsDielectricsNanostructured materialsNanolaminate dielectrics combine two or more insulating materials in a many-layered film. These structures can be made to significantly outperform films composed of a single one of their constituent materials by adjusting the composition ratio, arrangement, and size of the component layers. In this work, atomic layer deposition (ALD) is used to fabricate pure-oxide and nanolaminate dielectrics based upon Al₂O₃ and ZrO₂. The relative performance of these dielectrics is investigated with respect to application as gate dielectrics for ZnSnO (ZTO) and InGaZnO (IGZO) amorphous-oxide-semiconductor (AOS) thin-film transistors (TFTs). AOS TFTs are promising candidates for commercial use in applications such as active-matrix displays and e-paper. It was found that the layer thickness, relative composition, and interfacial material all had an effect on TFT performance. Several variants of the Al₂O₃/ZrO₂ nanolaminate were found to exhibit superior properties to either Al₂O₃ or ZrO₂ alone.Graduation date: 2011Conley, John F. Jr2011-06-10T19:44:14Z2011-06-10T19:44:14Z2011-05-232011-06-10Thesis/Dissertationhttp://hdl.handle.net/1957/21720en_US
collection	NDLTD
language	en_US
sources	NDLTD
topic	Atomic layer deposition Amorphous oxide semiconductor Dielectric Thin film transistor Amorphous semiconductors Thin film transistors Dielectrics Nanostructured materials
spellingShingle	Atomic layer deposition Amorphous oxide semiconductor Dielectric Thin film transistor Amorphous semiconductors Thin film transistors Dielectrics Nanostructured materials Triska, Joshua B. Atomic layer deposition of nanolaminate high-κ gate dielectrics for amorphous-oxide semiconductor thin film transistors
description	Nanolaminate dielectrics combine two or more insulating materials in a many-layered film. These structures can be made to significantly outperform films composed of a single one of their constituent materials by adjusting the composition ratio, arrangement, and size of the component layers. In this work, atomic layer deposition (ALD) is used to fabricate pure-oxide and nanolaminate dielectrics based upon Al₂O₃ and ZrO₂. The relative performance of these dielectrics is investigated with respect to application as gate dielectrics for ZnSnO (ZTO) and InGaZnO (IGZO) amorphous-oxide-semiconductor (AOS) thin-film transistors (TFTs). AOS TFTs are promising candidates for commercial use in applications such as active-matrix displays and e-paper. It was found that the layer thickness, relative composition, and interfacial material all had an effect on TFT performance. Several variants of the Al₂O₃/ZrO₂ nanolaminate were found to exhibit superior properties to either Al₂O₃ or ZrO₂ alone. === Graduation date: 2011
author2	Conley, John F. Jr
author_facet	Conley, John F. Jr Triska, Joshua B.
author	Triska, Joshua B.
author_sort	Triska, Joshua B.
title	Atomic layer deposition of nanolaminate high-κ gate dielectrics for amorphous-oxide semiconductor thin film transistors
title_short	Atomic layer deposition of nanolaminate high-κ gate dielectrics for amorphous-oxide semiconductor thin film transistors
title_full	Atomic layer deposition of nanolaminate high-κ gate dielectrics for amorphous-oxide semiconductor thin film transistors
title_fullStr	Atomic layer deposition of nanolaminate high-κ gate dielectrics for amorphous-oxide semiconductor thin film transistors
title_full_unstemmed	Atomic layer deposition of nanolaminate high-κ gate dielectrics for amorphous-oxide semiconductor thin film transistors
title_sort	atomic layer deposition of nanolaminate high-κ gate dielectrics for amorphous-oxide semiconductor thin film transistors
publishDate	2011
url	http://hdl.handle.net/1957/21720
work_keys_str_mv	AT triskajoshuab atomiclayerdepositionofnanolaminatehighkgatedielectricsforamorphousoxidesemiconductorthinfilmtransistors
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Atomic layer deposition of nanolaminate high-κ gate dielectrics for amorphous-oxide semiconductor thin film transistors

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