Universal properties of linear magnetoresistance in strongly disordered MnAs-GaAs composite semiconductors
Linear magnetoresistance (LMR) occurs in semiconductors as a consequence of strong electrical disorder and is characterized by nonsaturating magnetoresistance that is proportional to the applied magnetic field. By investigating a disordered MnAs-GaAs composite material, it is found that the magnitud...
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| Online Access: | http://hdl.handle.net/2047/d20001191 |