Electronic transport in oxygen deficient ferromagnetic semiconducting TiO$_{2-\delta}$
TiO${2-\delta}$ films were deposited on (100) Lanthanum aluminates LaAlO${3}$ substrates at a very low oxygen chamber pressure $P\approx 0.3$ mtorr employing a pulsed laser ablation deposition technique. In previous work, it was established that the oxygen deficiency in these films induced ferromagn...
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| Online Access: | http://hdl.handle.net/2047/d20000783 |