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ndltd-NEU--neu-330541
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oai_dc
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ndltd-NEU--neu-3305412016-04-25T16:14:07ZEnhanced coercive and remanence fields for CoFe<sub>2</sub>O<sub>4</sub> and BaFe<sub>1</sub><sub>2</sub>O<sub>1</sub><sub>9</sub> bilayers deposited on (111) MgOHigh quality epitaxial bilayer films of spinel CoFe<sub>2</sub>O<sub>4</sub> (CoF) and M-type hexagonal ferrite BaFe<sub>1</sub><sub>2</sub>O<sub>1</sub><sub>9</sub> (BaM) were deposited onto (111) magnesium oxide (MgO) substrate by pulsed laser ablation deposition. X-ray diffraction patterns of both BaM/CoF and CoF/BaM films showed only (0001) BaM, (111) CoF, and (111) MgO peaks. The highest coercive field of Hc=1.4 kOe was obtained for a BaM/CoF film where the CoF layer was deposited at 400°C, which was higher than typical Hc values of ∽0.4 kOe found for single layer BaM films on (111) MgO. This was less than the Hc ∽3.0 kOe found for (111) CoF films deposited at 400 °C, probably due to in situ annealing effects during the growth of the overlying BaM film at 900°C. This Hc enhancement for BaM/CoF bilayers as compared to BaM/MgO films may provide a means to combine large coercive fields with high quality hexaferrite films.http://hdl.handle.net/2047/d20002213
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NDLTD
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NDLTD
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High quality epitaxial bilayer films of spinel CoFe<sub>2</sub>O<sub>4</sub> (CoF) and M-type hexagonal ferrite BaFe<sub>1</sub><sub>2</sub>O<sub>1</sub><sub>9</sub> (BaM) were deposited onto (111) magnesium oxide (MgO) substrate by pulsed laser ablation deposition. X-ray diffraction patterns of both BaM/CoF and CoF/BaM films showed only (0001) BaM, (111) CoF, and (111) MgO peaks. The highest coercive field of Hc=1.4 kOe was obtained for a BaM/CoF film where the CoF layer was deposited at 400°C, which was higher than typical Hc values of ∽0.4 kOe found for single layer BaM films on (111) MgO. This was less than the Hc ∽3.0 kOe found for (111) CoF films deposited at 400 °C, probably due to in situ annealing effects during the growth of the overlying BaM film at 900°C. This Hc enhancement for BaM/CoF bilayers as compared to BaM/MgO films may provide a means to combine large coercive fields with high quality hexaferrite films.
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| title |
Enhanced coercive and remanence fields for CoFe<sub>2</sub>O<sub>4</sub> and BaFe<sub>1</sub><sub>2</sub>O<sub>1</sub><sub>9</sub> bilayers deposited on (111) MgO
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| spellingShingle |
Enhanced coercive and remanence fields for CoFe<sub>2</sub>O<sub>4</sub> and BaFe<sub>1</sub><sub>2</sub>O<sub>1</sub><sub>9</sub> bilayers deposited on (111) MgO
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| title_short |
Enhanced coercive and remanence fields for CoFe<sub>2</sub>O<sub>4</sub> and BaFe<sub>1</sub><sub>2</sub>O<sub>1</sub><sub>9</sub> bilayers deposited on (111) MgO
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| title_full |
Enhanced coercive and remanence fields for CoFe<sub>2</sub>O<sub>4</sub> and BaFe<sub>1</sub><sub>2</sub>O<sub>1</sub><sub>9</sub> bilayers deposited on (111) MgO
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| title_fullStr |
Enhanced coercive and remanence fields for CoFe<sub>2</sub>O<sub>4</sub> and BaFe<sub>1</sub><sub>2</sub>O<sub>1</sub><sub>9</sub> bilayers deposited on (111) MgO
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| title_full_unstemmed |
Enhanced coercive and remanence fields for CoFe<sub>2</sub>O<sub>4</sub> and BaFe<sub>1</sub><sub>2</sub>O<sub>1</sub><sub>9</sub> bilayers deposited on (111) MgO
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| title_sort |
enhanced coercive and remanence fields for cofe<sub>2</sub>o<sub>4</sub> and bafe<sub>1</sub><sub>2</sub>o<sub>1</sub><sub>9</sub> bilayers deposited on (111) mgo
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| url |
http://hdl.handle.net/2047/d20002213
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1718235651659268096
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