Analysis of scratches formed on oxide surface during chemical mechanical planarization
Scratch formation on patterned oxide wafers during the chemical mechanical planarization process was investigated. Silica and ceria slurries were used for polishing the experiments to observe the effect of abrasives on the scratch formation. Interlevel dielectric patterned wafers were used to study...
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| Online Access: | http://hdl.handle.net/2047/d20000966 |