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ndltd-NEU--neu-3298332016-04-25T16:13:46ZLow temperature growth of crystalline magnesium oxide on hexagonal silicon carbide (0001) by molecular beam epitaxyMagnesium oxide (111) was grown epitaxially on hexagonal silicon carbide (H-SiC) (0001) substrates at low temperatures by molecular beam epitaxy and a remote oxygen plasma source. The films were characterized by reflection high-energy electron diffraction, Auger electron spectroscopy, x-ray photoelectron spectroscopy, and atomic force microscopy. Crystal structure, morphology, and growth rate of the magnesium oxide (MgO) films were found to be dependent on the magnesium flux, indicating a magnesium adsorption controlled growth mechanism. The single crystalline MgO thin films had an epitaxial relationship where MgO (111) 6H-SiC (0001) and were stable in both air and 10<sup>-</sup><sup>9</sup> Torr up to 1023 K.http://hdl.handle.net/2047/d20000711
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Magnesium oxide (111) was grown epitaxially on hexagonal silicon carbide (H-SiC) (0001) substrates at low temperatures by molecular beam epitaxy and a remote oxygen plasma source. The films were characterized by reflection high-energy electron diffraction, Auger electron spectroscopy, x-ray photoelectron spectroscopy, and atomic force microscopy. Crystal structure, morphology, and growth rate of the magnesium oxide (MgO) films were found to be dependent on the magnesium flux, indicating a magnesium adsorption controlled growth mechanism. The single crystalline MgO thin films had an epitaxial relationship where MgO (111) 6H-SiC (0001) and were stable in both air and 10<sup>-</sup><sup>9</sup> Torr up to 1023 K.
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Low temperature growth of crystalline magnesium oxide on hexagonal silicon carbide (0001) by molecular beam epitaxy
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Low temperature growth of crystalline magnesium oxide on hexagonal silicon carbide (0001) by molecular beam epitaxy
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title_short |
Low temperature growth of crystalline magnesium oxide on hexagonal silicon carbide (0001) by molecular beam epitaxy
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title_full |
Low temperature growth of crystalline magnesium oxide on hexagonal silicon carbide (0001) by molecular beam epitaxy
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title_fullStr |
Low temperature growth of crystalline magnesium oxide on hexagonal silicon carbide (0001) by molecular beam epitaxy
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title_full_unstemmed |
Low temperature growth of crystalline magnesium oxide on hexagonal silicon carbide (0001) by molecular beam epitaxy
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title_sort |
low temperature growth of crystalline magnesium oxide on hexagonal silicon carbide (0001) by molecular beam epitaxy
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http://hdl.handle.net/2047/d20000711
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1718235582216273920
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