Modeling undeposited CNTs for high performance design and the evaluation of reliable CNTFET circuits

• Online Access: http://hdl.handle.net/2047/d20002840

The Carbon NanoTube Field Effect Transistor (CNTFET) is one of the most promising emerging technologies to extend and complement silicon MOSFET; this is due to its excellent performance characteristics and similarity in operational principles and device structure. During manufacturing, CNTs are usually grown or transferred to a substrate with a fixed pitch prior to defining the gates and the contacts. One of the likely defects occurs during the deposition of the CNTs, i.e. only some of the required CNTs are deposited. These defects significantly affect the performance of the CNTFET, because the number of CNTs present in the channel is reduced and the distances between CNTs become uneven, thus causing changes of current and capacitance.