Formation of silicon nitride gate dielectric films at 300 ℃ employing radical chemical vapor deposition

Formation of silicon nitride gate dielectric films at 300 ℃ employing radical chemical vapor deposition

Bibliographic Details
Main Authors: Ohta, Hiroyuki, Nagashima, Atsushi, Ito, Masafumi, Hori, Masaru, Goto, Toshio
Language:en
Published: American Institute of Physics 2000
Online Access:http://dx.doi.org/10.1116/1.1289549
http://hdl.handle.net/2237/7102
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spelling ndltd-NAGOYA-oai-ir.nul.nagoya-u.ac.jp-2237-71022013-06-26T03:21:01ZFormation of silicon nitride gate dielectric films at 300 ℃ employing radical chemical vapor depositionOhta, HiroyukiNagashima, AtsushiIto, MasafumiHori, MasaruGoto, ToshioAmerican Institute of Physics2000-09Article(publisher)http://dx.doi.org/10.1116/1.1289549http://hdl.handle.net/2237/71021071-1023Journal of Vacuum Science & Technology B v.18 n.5, 2000, p.2486-2490enCopyright (2000) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
collection NDLTD
language en
sources NDLTD
author Ohta, Hiroyuki
Nagashima, Atsushi
Ito, Masafumi
Hori, Masaru
Goto, Toshio
spellingShingle Ohta, Hiroyuki
Nagashima, Atsushi
Ito, Masafumi
Hori, Masaru
Goto, Toshio
Formation of silicon nitride gate dielectric films at 300 ℃ employing radical chemical vapor deposition
author_facet Ohta, Hiroyuki
Nagashima, Atsushi
Ito, Masafumi
Hori, Masaru
Goto, Toshio
author_sort Ohta, Hiroyuki
title Formation of silicon nitride gate dielectric films at 300 ℃ employing radical chemical vapor deposition
title_short Formation of silicon nitride gate dielectric films at 300 ℃ employing radical chemical vapor deposition
title_full Formation of silicon nitride gate dielectric films at 300 ℃ employing radical chemical vapor deposition
title_fullStr Formation of silicon nitride gate dielectric films at 300 ℃ employing radical chemical vapor deposition
title_full_unstemmed Formation of silicon nitride gate dielectric films at 300 ℃ employing radical chemical vapor deposition
title_sort formation of silicon nitride gate dielectric films at 300 ℃ employing radical chemical vapor deposition
publisher American Institute of Physics
publishDate 2000
url http://dx.doi.org/10.1116/1.1289549
http://hdl.handle.net/2237/7102
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AT nagashimaatsushi formationofsiliconnitridegatedielectricfilmsat300employingradicalchemicalvapordeposition
AT itomasafumi formationofsiliconnitridegatedielectricfilmsat300employingradicalchemicalvapordeposition
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