Hole mobility in strained Ge/relaxed SiGe with a High-k/metal gate stack
Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2011. === Cataloged from PDF version of thesis. === Includes bibliographical references (p. 46-48). === The need for high speed and density in the modem semiconductor industry requires new cha...
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| Language: | English |
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Massachusetts Institute of Technology
2011
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| Online Access: | http://hdl.handle.net/1721.1/64597 |