Advanced technologies for improving high frequency performance of AlGaN/GaN high electron mobility transistors
Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2008. === Includes bibliographical references (leaves 77-80). === In this thesis, we have used a combination of physical analysis, numerical simulation and experimental work to identify and ov...
Main Author: | Chung, Jinwook W. (Jinwook Will) |
---|---|
Other Authors: | Tomás Palacios. |
Format: | Others |
Language: | English |
Published: |
Massachusetts Institute of Technology
2009
|
Subjects: | |
Online Access: | http://hdl.handle.net/1721.1/44366 |
Similar Items
-
Millimeter-wave GaN high electron mobility transistors and their integration with silicon electronics
by: Chung, Jinwook W. (Jinwook Will)
Published: (2011) -
Gate-First AlGaN/GaN HEMT Technology for High-Frequency Applications
by: Piner, Edwin L., et al.
Published: (2010) -
Investigation on the AlGaN/GaN High Electron Mobility Transistors
by: Lin,BingCian, et al.
Published: (2012) -
The Study of AlGaN/GaN High Electron Mobility Transistors for High Frequency and High Power Applications
by: Lu, Chung-Yu, et al.
Published: (2010) -
Investigation of AlGaN/AlN/GaN-Based High Electron Mobility Transistors
by: Chung Cheng-Chiang, et al.
Published: (2014)