A low dispersion 2-GHz comparator

Thesis (M. Eng. and S.B.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2001. === Includes bibliographical references (leaves 40-41). === A low dispersion 2-GHz comparator is an essential part of the latest automated VLSI tester by Teradyne Inc. With e...

Full description

Bibliographic Details
Main Author: Johnston, William F. (William Francis)
Other Authors: Allan Parks and James K. Roberge.
Format: Others
Language:English
Published: Massachusetts Institute of Technology 2007
Subjects:
Online Access:http://hdl.handle.net/1721.1/36781
id ndltd-MIT-oai-dspace.mit.edu-1721.1-36781
record_format oai_dc
spelling ndltd-MIT-oai-dspace.mit.edu-1721.1-367812019-05-02T16:13:12Z A low dispersion 2-GHz comparator Low dispersion two-gigahertz comparator Johnston, William F. (William Francis) Allan Parks and James K. Roberge. Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science. Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science. Electrical Engineering and Computer Science. Thesis (M. Eng. and S.B.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2001. Includes bibliographical references (leaves 40-41). A low dispersion 2-GHz comparator is an essential part of the latest automated VLSI tester by Teradyne Inc. With each new and faster CMOS logic VLSI microchips, faster and more precise comparators are needed to verify that the static discipline is being met on the many pins of the integrated circuit. As the error in the comparator is lowered, the VLSI production yield is greatly increased because of greater certainty of the measurements. The comparator described within is designed to test a variety of CMOS logic levels at the expected logic levels and rise-times of the near future. The result is a Si-Ge integrated comparator with 12psec of dispersion by detailed simulation awaiting fabrication. Index Terms-Complementary metal oxide semiconductor transistor technology (CMOS technology), very large scale integration (VLSI), application specific integrated circuit (ASIC), silicon germanium (Si-Ge), integrated circuits (IC), automatic test equipment (ATE), personal computer (PC), digital signal processing (DSP), direct current (DC), alternating current (AC), device under test (DUT), pin electronics (PE), bipolar junction transistors (BJT), complementary metal oxide semiconductor field effect transistor (MOSFET). by William F. Johnston. M.Eng.and S.B. 2007-03-12T17:53:10Z 2007-03-12T17:53:10Z 2001 2001 Thesis http://hdl.handle.net/1721.1/36781 79476900 eng M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission. http://dspace.mit.edu/handle/1721.1/7582 41 leaves application/pdf Massachusetts Institute of Technology
collection NDLTD
language English
format Others
sources NDLTD
topic Electrical Engineering and Computer Science.
spellingShingle Electrical Engineering and Computer Science.
Johnston, William F. (William Francis)
A low dispersion 2-GHz comparator
description Thesis (M. Eng. and S.B.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2001. === Includes bibliographical references (leaves 40-41). === A low dispersion 2-GHz comparator is an essential part of the latest automated VLSI tester by Teradyne Inc. With each new and faster CMOS logic VLSI microchips, faster and more precise comparators are needed to verify that the static discipline is being met on the many pins of the integrated circuit. As the error in the comparator is lowered, the VLSI production yield is greatly increased because of greater certainty of the measurements. The comparator described within is designed to test a variety of CMOS logic levels at the expected logic levels and rise-times of the near future. The result is a Si-Ge integrated comparator with 12psec of dispersion by detailed simulation awaiting fabrication. Index Terms-Complementary metal oxide semiconductor transistor technology (CMOS technology), very large scale integration (VLSI), application specific integrated circuit (ASIC), silicon germanium (Si-Ge), integrated circuits (IC), automatic test equipment (ATE), personal computer (PC), digital signal processing (DSP), direct current (DC), alternating current (AC), device under test (DUT), pin electronics (PE), bipolar junction transistors (BJT), complementary metal oxide semiconductor field effect transistor (MOSFET). === by William F. Johnston. === M.Eng.and S.B.
author2 Allan Parks and James K. Roberge.
author_facet Allan Parks and James K. Roberge.
Johnston, William F. (William Francis)
author Johnston, William F. (William Francis)
author_sort Johnston, William F. (William Francis)
title A low dispersion 2-GHz comparator
title_short A low dispersion 2-GHz comparator
title_full A low dispersion 2-GHz comparator
title_fullStr A low dispersion 2-GHz comparator
title_full_unstemmed A low dispersion 2-GHz comparator
title_sort low dispersion 2-ghz comparator
publisher Massachusetts Institute of Technology
publishDate 2007
url http://hdl.handle.net/1721.1/36781
work_keys_str_mv AT johnstonwilliamfwilliamfrancis alowdispersion2ghzcomparator
AT johnstonwilliamfwilliamfrancis lowdispersiontwogigahertzcomparator
AT johnstonwilliamfwilliamfrancis lowdispersion2ghzcomparator
_version_ 1719036344498388992