The electromigration drift velocity and the reliability of dual-damascene copper interconnect trees
Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2004. === Includes bibliographical references (p. 96-98). === Cu has replaced Al as the interconnect metal of choice for high performance Si-based integrated circuits. Its electromigration behavior must...
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| Format: | Others |
| Language: | English |
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Massachusetts Institute of Technology
2006
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| Online Access: | http://hdl.handle.net/1721.1/30124 |