| Summary: | Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, June 2004. === "May 2004." === Includes bibliographical references (leaves 38-39). === Subsequent to accurate 2D inverse modeling in the regime sensitive to electrostatics of industrial sub-50 nm NMOSFETs, a 2D full-band Monte Carlo device simulator was calibrated in the regime sensitive to transport parameters. The relationship between electron mobility and high-electric-field velocity at the source-channel potential energy barrier was investigated. The results show a strong correlation, as was demonstrated previously experimentally. Moreover, further proof is provided that the velocity at which carriers are injected from the source region in modem NMOSFET's is only about half of the limiting thermal velocity. === by Osama Munir Nayfeh. === S.M.
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