Terahertz quantum cascade lasers

Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2003. === Includes bibliographical references (p. 297-310). === This electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and...

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Main Author: Williams, Benjamin S. (Benjamin Stanford), 1974-
Other Authors: Qing Hu.
Format: Others
Language:English
Published: Massachusetts Institute of Technology 2005
Subjects:
Online Access:http://hdl.handle.net/1721.1/17012
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language English
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topic Electrical Engineering and Computer Science.
spellingShingle Electrical Engineering and Computer Science.
Williams, Benjamin S. (Benjamin Stanford), 1974-
Terahertz quantum cascade lasers
description Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2003. === Includes bibliographical references (p. 297-310). === This electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections. === The development of the terahertz frequency range has long been impeded by the relative dearth of compact, coherent radiation sources of reasonable power. This thesis details the development of quantum cascade lasers (QCLs) that operate in the terahertz with photon energies below the semiconductor Reststrahlen band. Photons are emitted via electronic intersubband transitions that take place entirely within the conduction band, where the wavelength is chosen by engineering the well and barrier widths in multiple-quantum-well heterostructures. Fabrication of such long wavelength lasers has traditionally been challenging, since it is difficult to obtain a population inversion between such closely spaced energy levels, and because traditional dielectric waveguides become extremely lossy due to free carrier absorption. This thesis reports the development of terahertz QCLs in which the lower radiative state is depopulated via resonant longitudinal-optical phonon scattering. This mechanism is efficient and temperature insensitive, and provides protection from thermal backfilling due to the large energy separation between the lower radiative state and the injector. Both properties are important in allowing higher temperature operation at longer wavelengths. Lasers using a surface plasmon based waveguide grown on a semi-insulating (SI) GaAs substrate were demonstrated at 3.4 THz in pulsed mode up to 87 K, with peak collected powers of 14 mW at 5 K, and 4 mW at 77 K. === Additionally, the first terahertz QCLs have been demonstrated that use metalmetal waveguides, where the mode is confined between metal layers placed immediately above and below the active region. These devices have confinement factors close to unity, and are expected to be advantageous over SI-surface-plasmon waveguides, especially at long wavelengths. Such a waveguide was used to obtain lasing at 3.8 THz in pulsed mode up to a record high temperature of 137 K, whereas similar devices fabricated in SI-surface-plasmon waveguides had lower maximum lasing temperatures due to the higher losses and lower confinement factors. This thesis describes the theory, design, fabrication, and testing of terahertz quantum cascade laser devices. A summary of theory relevant to design is presented, including intersubband radiative transitions and gain, intersubband scattering, and coherent resonant tunneling transport using a tight-binding density matrix model. Analysis of the effects of the complex heterostructure phonon spectra on terahertz QCL design are considered. Calculations of the properties of various terahertz waveguides are presented and compared with experimental results. Various fabrication methods have been developed, including a robust metallic wafer bonding technique used to fabricate metal-metal waveguides. A wide variety of quantum cascade structures, both lasing and non-lasing, have been experimentally characterized, which yield valuable information about the transport and optical properties of terahertz devices. Finally, prospects for higher temperature operation of terahertz QCLs are considered. === by Benjamin S. Williams. === Ph.D.
author2 Qing Hu.
author_facet Qing Hu.
Williams, Benjamin S. (Benjamin Stanford), 1974-
author Williams, Benjamin S. (Benjamin Stanford), 1974-
author_sort Williams, Benjamin S. (Benjamin Stanford), 1974-
title Terahertz quantum cascade lasers
title_short Terahertz quantum cascade lasers
title_full Terahertz quantum cascade lasers
title_fullStr Terahertz quantum cascade lasers
title_full_unstemmed Terahertz quantum cascade lasers
title_sort terahertz quantum cascade lasers
publisher Massachusetts Institute of Technology
publishDate 2005
url http://hdl.handle.net/1721.1/17012
work_keys_str_mv AT williamsbenjaminsbenjaminstanford1974 terahertzquantumcascadelasers
AT williamsbenjaminsbenjaminstanford1974 terahertzqcls
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spelling ndltd-MIT-oai-dspace.mit.edu-1721.1-170122019-05-02T16:03:59Z Terahertz quantum cascade lasers Terahertz QCLs Williams, Benjamin S. (Benjamin Stanford), 1974- Qing Hu. Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science. Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science. Electrical Engineering and Computer Science. Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2003. Includes bibliographical references (p. 297-310). This electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections. The development of the terahertz frequency range has long been impeded by the relative dearth of compact, coherent radiation sources of reasonable power. This thesis details the development of quantum cascade lasers (QCLs) that operate in the terahertz with photon energies below the semiconductor Reststrahlen band. Photons are emitted via electronic intersubband transitions that take place entirely within the conduction band, where the wavelength is chosen by engineering the well and barrier widths in multiple-quantum-well heterostructures. Fabrication of such long wavelength lasers has traditionally been challenging, since it is difficult to obtain a population inversion between such closely spaced energy levels, and because traditional dielectric waveguides become extremely lossy due to free carrier absorption. This thesis reports the development of terahertz QCLs in which the lower radiative state is depopulated via resonant longitudinal-optical phonon scattering. This mechanism is efficient and temperature insensitive, and provides protection from thermal backfilling due to the large energy separation between the lower radiative state and the injector. Both properties are important in allowing higher temperature operation at longer wavelengths. Lasers using a surface plasmon based waveguide grown on a semi-insulating (SI) GaAs substrate were demonstrated at 3.4 THz in pulsed mode up to 87 K, with peak collected powers of 14 mW at 5 K, and 4 mW at 77 K. Additionally, the first terahertz QCLs have been demonstrated that use metalmetal waveguides, where the mode is confined between metal layers placed immediately above and below the active region. These devices have confinement factors close to unity, and are expected to be advantageous over SI-surface-plasmon waveguides, especially at long wavelengths. Such a waveguide was used to obtain lasing at 3.8 THz in pulsed mode up to a record high temperature of 137 K, whereas similar devices fabricated in SI-surface-plasmon waveguides had lower maximum lasing temperatures due to the higher losses and lower confinement factors. This thesis describes the theory, design, fabrication, and testing of terahertz quantum cascade laser devices. A summary of theory relevant to design is presented, including intersubband radiative transitions and gain, intersubband scattering, and coherent resonant tunneling transport using a tight-binding density matrix model. Analysis of the effects of the complex heterostructure phonon spectra on terahertz QCL design are considered. Calculations of the properties of various terahertz waveguides are presented and compared with experimental results. Various fabrication methods have been developed, including a robust metallic wafer bonding technique used to fabricate metal-metal waveguides. A wide variety of quantum cascade structures, both lasing and non-lasing, have been experimentally characterized, which yield valuable information about the transport and optical properties of terahertz devices. Finally, prospects for higher temperature operation of terahertz QCLs are considered. by Benjamin S. Williams. Ph.D. 2005-05-19T15:39:02Z 2005-05-19T15:39:02Z 2003 2003 Thesis http://hdl.handle.net/1721.1/17012 54455783 eng M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission. http://dspace.mit.edu/handle/1721.1/7582 310 p. 3960932 bytes 4972623 bytes application/pdf application/pdf application/pdf Massachusetts Institute of Technology