The device applications and characterization of nonstoichiometric GaAs grown by molecular beam epitaxy

Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1990. === Vita. === Includes bibliographical references (leaves 256-265). === by Frank William Smith III. === Ph.D.

Bibliographic Details
Main Author:	Smith, Frank William
Other Authors:	Alan L. McWhorter.
Format:	Others
Language:	English
Published:	Massachusetts Institute of Technology 2005
Subjects:	Electrical Engineering and Computer Science.
Online Access:	http://hdl.handle.net/1721.1/14039

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spelling	ndltd-MIT-oai-dspace.mit.edu-1721.1-140392019-05-02T16:37:37Z The device applications and characterization of nonstoichiometric GaAs grown by molecular beam epitaxy Smith, Frank William Alan L. McWhorter. Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science. Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science. Electrical Engineering and Computer Science. Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1990. Vita. Includes bibliographical references (leaves 256-265). by Frank William Smith III. Ph.D. 2005-08-10T19:15:39Z 2005-08-10T19:15:39Z 1990 1990 Thesis http://hdl.handle.net/1721.1/14039 23281999 eng M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission. http://dspace.mit.edu/handle/1721.1/7582 266 leaves 18606707 bytes 18606465 bytes application/pdf application/pdf application/pdf Massachusetts Institute of Technology
collection	NDLTD
language	English
format	Others
sources	NDLTD
topic	Electrical Engineering and Computer Science.
spellingShingle	Electrical Engineering and Computer Science. Smith, Frank William The device applications and characterization of nonstoichiometric GaAs grown by molecular beam epitaxy
description	Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1990. === Vita. === Includes bibliographical references (leaves 256-265). === by Frank William Smith III. === Ph.D.
author2	Alan L. McWhorter.
author_facet	Alan L. McWhorter. Smith, Frank William
author	Smith, Frank William
author_sort	Smith, Frank William
title	The device applications and characterization of nonstoichiometric GaAs grown by molecular beam epitaxy
title_short	The device applications and characterization of nonstoichiometric GaAs grown by molecular beam epitaxy
title_full	The device applications and characterization of nonstoichiometric GaAs grown by molecular beam epitaxy
title_fullStr	The device applications and characterization of nonstoichiometric GaAs grown by molecular beam epitaxy
title_full_unstemmed	The device applications and characterization of nonstoichiometric GaAs grown by molecular beam epitaxy
title_sort	device applications and characterization of nonstoichiometric gaas grown by molecular beam epitaxy
publisher	Massachusetts Institute of Technology
publishDate	2005
url	http://hdl.handle.net/1721.1/14039
work_keys_str_mv	AT smithfrankwilliam thedeviceapplicationsandcharacterizationofnonstoichiometricgaasgrownbymolecularbeamepitaxy AT smithfrankwilliam deviceapplicationsandcharacterizationofnonstoichiometricgaasgrownbymolecularbeamepitaxy
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The device applications and characterization of nonstoichiometric GaAs grown by molecular beam epitaxy

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