Remote epitaxy of III-N membranes on amorphous boron nitride

• Main Author: Liu, Yunpeng,S.M.Massachusetts Institute of Technology.
• Other Authors: Jeehwan Kim.
• Format: Others
• Language: English
• Published: Massachusetts Institute of Technology 2021
• Subjects: Mechanical Engineering.
• Online Access: https://hdl.handle.net/1721.1/130861

Thesis: S.M., Massachusetts Institute of Technology, Department of Mechanical Engineering, February, 2021 === Cataloged from the official PDF version of thesis. === Includes bibliographical references (pages 35-37). === Amorphous boron nitride (aBN) has found broad applications in industrial applications. Thick aBN has been thoroughly investigated¹,², including the recent revisiting of this material at nanometer thickness. However, most investigations of aBN so far have been based on three-dimensional structures. In this thesis, Molecular-Beam Epitaxy (MBE) grown monolayer aBN in two-dimensional structure is demonstrated. In-situ gallium nitride (GaN) remote epitaxy is finished on the transparent monolayer aBN. By doing the in-situ remote epitaxy, contaminations are avoided, and epitaxial membrane quality is improved. Multi-stacking technique is developed to further enhance the manufacturing efficiency of the free-standing GaN film. Surface acoustic wave (SAW) strain sensor fabricated by free-standing ultrathin single crystalline GaN film shows good performances. Process to solve GaN device heat dissipation is presented. Relaxed InGaN film grown on aBN monolayer provides a new research direction for GaN based red LED. === by Yunpeng Liu. === S.M. === S.M. Massachusetts Institute of Technology, Department of Mechanical Engineering