Impact of extended defects on ion diffusion and reactivity in binary oxides : assessed by atomistic simulations
Thesis: Ph. D., Massachusetts Institute of Technology, Department of Nuclear Science and Engineering, 2019 === Cataloged from PDF version of thesis. === Includes bibliographical references (pages 195-238). === Extended defects, such as dislocations, grain boundaries and surface step edges, are ubiqu...
Main Author: | Sun, Lixin,Ph. D.Massachusetts Institute of Technology. |
---|---|
Other Authors: | Bilge Yildiz. |
Format: | Others |
Language: | English |
Published: |
Massachusetts Institute of Technology
2019
|
Subjects: | |
Online Access: | https://hdl.handle.net/1721.1/121806 |
Similar Items
-
Atomistic simulation of defect structure evolution and mechanical properties at long time scales
by: Fan, Yue, Ph. D. Massachusetts Institute of Technology
Published: (2013) -
Atomistic simulation of defects and diffusion in oxides
by: Murphy, Samuel T.
Published: (2009) -
Cumulative migration method for computing multi-group transport cross sections and diffusion coefficients with Monte Carlo calculations
by: Liu, Zhaoyuan,Ph. D.Massachusetts Institute of Technology.
Published: (2021) -
Electronic structure of perovskite oxide surfaces at elevated temperatures and its correlation with oxygen reduction reactivity
by: Chen, Yan, Ph. D. Massachusetts Institute of Technology
Published: (2014) -
Atomistics of defect nucleation and mobility : dislocations and twinning
by: Chang, Jinpeng, 1974-
Published: (2005)