Dislocation engineering in InAlGaAs/SiGe alloy systems for heteroepitaxial integration
Thesis: Ph. D., Massachusetts Institute of Technology, Department of Materials Science and Engineering, 2019 === Cataloged from PDF version of thesis. === Includes bibliographical references (pages 87-92). === Semiconductor devices based on GaAs substrates use III-V alloy systems like Inx(AlyGa₁₋y)₁...
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| Format: | Others |
| Language: | English |
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Massachusetts Institute of Technology
2019
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| Online Access: | https://hdl.handle.net/1721.1/121594 |