Root cause defect identification in multicrystalline silicon for improved photovoltaic module reliability

Thesis: Ph. D., Massachusetts Institute of Technology, Department of Mechanical Engineering, 2018. === Cataloged from PDF version of thesis. === Includes bibliographical references (pages 135-145). === To meet climate targets by 2030, manufacturing capacity for photovoltaic (PV) modules must be scal...

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Main Author: Jensen, Mallory Ann
Other Authors: Tonio Buonassisi.
Format: Others
Language:English
Published: Massachusetts Institute of Technology 2018
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Online Access:http://hdl.handle.net/1721.1/119344
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spelling ndltd-MIT-oai-dspace.mit.edu-1721.1-1193442019-05-02T16:35:57Z Root cause defect identification in multicrystalline silicon for improved photovoltaic module reliability Jensen, Mallory Ann Tonio Buonassisi. Massachusetts Institute of Technology. Department of Mechanical Engineering. Massachusetts Institute of Technology. Department of Mechanical Engineering. Mechanical Engineering. Thesis: Ph. D., Massachusetts Institute of Technology, Department of Mechanical Engineering, 2018. Cataloged from PDF version of thesis. Includes bibliographical references (pages 135-145). To meet climate targets by 2030, manufacturing capacity for photovoltaic (PV) modules must be scaled at 22-25% annual growth rate while maintaining high performance and low selling price. The most suitable material substrate to enable this scale-up is cast multicrystalline silicon (mc-Si) due to its low operating cost and capital requirements compared to other technologies. However, a new form of light-induced degradation was discovered when transitioning mc-Si to the latest high efficiency device architecture. Light- and elevated temperature-induced degradation (LeTID) causes performance to decrease by about 10% (relative) under field-relevant conditions within only four months. In this work, the root cause of LeTID is investigated in three parts: (1) Candidate hypotheses are developed for LeTID; (2) Targeted experiments are carried out toward developing a defect-based description of LeTID; and (3) The basis for a predictive model of LeTID is proposed. Techniques including minority carrier lifetime spectroscopy, synchrotron-based X-ray fluorescence, intentional contamination, and process simulation are employed to probe the defect causing LeTID. The results indicate that LeTID is caused by at least two reactants-hydrogen and one or more reactants that can be modified by high-temperature processing-and that the defect at the point of maximum degradation has recombination characteristics similar to a deep-level donor in silicon. By providing the basis for a predictive model, this work enables both identification of the root cause of LeTID and de-risking of novel solar cell architectures based on mc-Si, allowing assessment of the impact of LeTID on the future of the PV industry. This work also enables development of mitigating strategies for LeTID. Funding from the National Science Foundation Graduate Research Fellowship Program and grants from the National Science Foundation and the U.S. Department of Energy by Mallory Ann Jensen. Ph. D. 2018-11-28T15:44:06Z 2018-11-28T15:44:06Z 2018 2018 Thesis http://hdl.handle.net/1721.1/119344 1065537939 eng MIT theses are protected by copyright. They may be viewed, downloaded, or printed from this source but further reproduction or distribution in any format is prohibited without written permission. http://dspace.mit.edu/handle/1721.1/7582 145 pages application/pdf Massachusetts Institute of Technology
collection NDLTD
language English
format Others
sources NDLTD
topic Mechanical Engineering.
spellingShingle Mechanical Engineering.
Jensen, Mallory Ann
Root cause defect identification in multicrystalline silicon for improved photovoltaic module reliability
description Thesis: Ph. D., Massachusetts Institute of Technology, Department of Mechanical Engineering, 2018. === Cataloged from PDF version of thesis. === Includes bibliographical references (pages 135-145). === To meet climate targets by 2030, manufacturing capacity for photovoltaic (PV) modules must be scaled at 22-25% annual growth rate while maintaining high performance and low selling price. The most suitable material substrate to enable this scale-up is cast multicrystalline silicon (mc-Si) due to its low operating cost and capital requirements compared to other technologies. However, a new form of light-induced degradation was discovered when transitioning mc-Si to the latest high efficiency device architecture. Light- and elevated temperature-induced degradation (LeTID) causes performance to decrease by about 10% (relative) under field-relevant conditions within only four months. In this work, the root cause of LeTID is investigated in three parts: (1) Candidate hypotheses are developed for LeTID; (2) Targeted experiments are carried out toward developing a defect-based description of LeTID; and (3) The basis for a predictive model of LeTID is proposed. Techniques including minority carrier lifetime spectroscopy, synchrotron-based X-ray fluorescence, intentional contamination, and process simulation are employed to probe the defect causing LeTID. The results indicate that LeTID is caused by at least two reactants-hydrogen and one or more reactants that can be modified by high-temperature processing-and that the defect at the point of maximum degradation has recombination characteristics similar to a deep-level donor in silicon. By providing the basis for a predictive model, this work enables both identification of the root cause of LeTID and de-risking of novel solar cell architectures based on mc-Si, allowing assessment of the impact of LeTID on the future of the PV industry. This work also enables development of mitigating strategies for LeTID. === Funding from the National Science Foundation Graduate Research Fellowship Program and grants from the National Science Foundation and the U.S. Department of Energy === by Mallory Ann Jensen. === Ph. D.
author2 Tonio Buonassisi.
author_facet Tonio Buonassisi.
Jensen, Mallory Ann
author Jensen, Mallory Ann
author_sort Jensen, Mallory Ann
title Root cause defect identification in multicrystalline silicon for improved photovoltaic module reliability
title_short Root cause defect identification in multicrystalline silicon for improved photovoltaic module reliability
title_full Root cause defect identification in multicrystalline silicon for improved photovoltaic module reliability
title_fullStr Root cause defect identification in multicrystalline silicon for improved photovoltaic module reliability
title_full_unstemmed Root cause defect identification in multicrystalline silicon for improved photovoltaic module reliability
title_sort root cause defect identification in multicrystalline silicon for improved photovoltaic module reliability
publisher Massachusetts Institute of Technology
publishDate 2018
url http://hdl.handle.net/1721.1/119344
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