Focused atmospheric-pressure microsputterer for additive manufacturing of microelectronics interconnects

Thesis: S.M., Massachusetts Institute of Technology, Department of Mechanical Engineering, 2018. === Cataloged from PDF version of thesis. === Includes bibliographical references (pages 45-49). === The past decade has seen a new manufacturing revolution, in the form of additive manufacturing. While...

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Main Author: Kornbluth, Yosef S
Other Authors: Luis Fernando Velásuez-García
Format: Others
Language:English
Published: Massachusetts Institute of Technology 2018
Subjects:
Online Access:http://hdl.handle.net/1721.1/118707
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spelling ndltd-MIT-oai-dspace.mit.edu-1721.1-1187072019-05-02T16:21:15Z Focused atmospheric-pressure microsputterer for additive manufacturing of microelectronics interconnects Kornbluth, Yosef S Luis Fernando Velásuez-García Massachusetts Institute of Technology. Department of Mechanical Engineering. Massachusetts Institute of Technology. Department of Mechanical Engineering. Mechanical Engineering. Thesis: S.M., Massachusetts Institute of Technology, Department of Mechanical Engineering, 2018. Cataloged from PDF version of thesis. Includes bibliographical references (pages 45-49). The past decade has seen a new manufacturing revolution, in the form of additive manufacturing. While recent additive manufacturing processes can produce structural materials in intricate shapes not previously possible, additive manufacturing of functional materials remains a challenge. In particular, functional electronics must still be made via traditional lithographic and etching processes. This thesis introduces a microsputtering method to directly write metals with high resolution. A wire feed enables continuous, extended use of the system. We motivate, simulate, and test a novel electrostatic focusing system to improve the resolution of the imprints; this focusing scheme combines electrostatic and fluid effects to direct the sputtered material into a strip as narrow as 9 pm. The microstructure of the deposits, which affects their conductivity, is also explored and modified. Using gold as printable feedstock, this technology allows for smooth (55 nm roughness) deposits with ~65X the electrical conductivity of bulk metal. by Yosef S. Kornbluth. S.M. 2018-10-22T18:45:48Z 2018-10-22T18:45:48Z 2018 2018 Thesis http://hdl.handle.net/1721.1/118707 1056978006 eng MIT theses are protected by copyright. They may be viewed, downloaded, or printed from this source but further reproduction or distribution in any format is prohibited without written permission. http://dspace.mit.edu/handle/1721.1/7582 49 pages application/pdf Massachusetts Institute of Technology
collection NDLTD
language English
format Others
sources NDLTD
topic Mechanical Engineering.
spellingShingle Mechanical Engineering.
Kornbluth, Yosef S
Focused atmospheric-pressure microsputterer for additive manufacturing of microelectronics interconnects
description Thesis: S.M., Massachusetts Institute of Technology, Department of Mechanical Engineering, 2018. === Cataloged from PDF version of thesis. === Includes bibliographical references (pages 45-49). === The past decade has seen a new manufacturing revolution, in the form of additive manufacturing. While recent additive manufacturing processes can produce structural materials in intricate shapes not previously possible, additive manufacturing of functional materials remains a challenge. In particular, functional electronics must still be made via traditional lithographic and etching processes. This thesis introduces a microsputtering method to directly write metals with high resolution. A wire feed enables continuous, extended use of the system. We motivate, simulate, and test a novel electrostatic focusing system to improve the resolution of the imprints; this focusing scheme combines electrostatic and fluid effects to direct the sputtered material into a strip as narrow as 9 pm. The microstructure of the deposits, which affects their conductivity, is also explored and modified. Using gold as printable feedstock, this technology allows for smooth (55 nm roughness) deposits with ~65X the electrical conductivity of bulk metal. === by Yosef S. Kornbluth. === S.M.
author2 Luis Fernando Velásuez-García
author_facet Luis Fernando Velásuez-García
Kornbluth, Yosef S
author Kornbluth, Yosef S
author_sort Kornbluth, Yosef S
title Focused atmospheric-pressure microsputterer for additive manufacturing of microelectronics interconnects
title_short Focused atmospheric-pressure microsputterer for additive manufacturing of microelectronics interconnects
title_full Focused atmospheric-pressure microsputterer for additive manufacturing of microelectronics interconnects
title_fullStr Focused atmospheric-pressure microsputterer for additive manufacturing of microelectronics interconnects
title_full_unstemmed Focused atmospheric-pressure microsputterer for additive manufacturing of microelectronics interconnects
title_sort focused atmospheric-pressure microsputterer for additive manufacturing of microelectronics interconnects
publisher Massachusetts Institute of Technology
publishDate 2018
url http://hdl.handle.net/1721.1/118707
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