T-junction resonant modulators and detectors in CMOS

Thesis: M. Eng., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2016. === This electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections. === Cataloged from student-s...

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Main Author: Cheian, Dinis
Other Authors: Rajeev Ram.
Format: Others
Language:English
Published: Massachusetts Institute of Technology 2017
Subjects:
Online Access:http://hdl.handle.net/1721.1/112823
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spelling ndltd-MIT-oai-dspace.mit.edu-1721.1-1128232019-05-02T16:23:51Z T-junction resonant modulators and detectors in CMOS Cheian, Dinis Rajeev Ram. Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science. Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science. Electrical Engineering and Computer Science. Thesis: M. Eng., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2016. This electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections. Cataloged from student-submitted PDF version of thesis. Includes bibliographical references (pages 128-131). Design of optical modulators and detectors is investigated. A new design idea is proposed for optical modulators - T-junction. The T-junction allows to decouple the Extinction Ratio from the Bandwidth and to optimize each separately. Initial T-junction modulator provides an increase in bandwidth - 13 GHz versus 3 GHz, for the previous designs. An analytical model is created and is verified against the experimental data of the T-junctions. The model is then used to optimize the modulators and to achieve a design operating at above 35 GHz. The bandwidth increase with optical intensity is investigated in detectors. The unusual behavior is reproduced in Sentaurus. The severe depletion of the N and P regions is found to be responsible for the bandwidth variations. Increasing the doping of the P and N regions proves to successfully tackle the problem. by Dinis Cheian. M. Eng. 2017-12-20T17:24:08Z 2017-12-20T17:24:08Z 2016 2016 Thesis http://hdl.handle.net/1721.1/112823 1014181810 eng MIT theses are protected by copyright. They may be viewed, downloaded, or printed from this source but further reproduction or distribution in any format is prohibited without written permission. http://dspace.mit.edu/handle/1721.1/7582 131 pages application/pdf Massachusetts Institute of Technology
collection NDLTD
language English
format Others
sources NDLTD
topic Electrical Engineering and Computer Science.
spellingShingle Electrical Engineering and Computer Science.
Cheian, Dinis
T-junction resonant modulators and detectors in CMOS
description Thesis: M. Eng., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2016. === This electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections. === Cataloged from student-submitted PDF version of thesis. === Includes bibliographical references (pages 128-131). === Design of optical modulators and detectors is investigated. A new design idea is proposed for optical modulators - T-junction. The T-junction allows to decouple the Extinction Ratio from the Bandwidth and to optimize each separately. Initial T-junction modulator provides an increase in bandwidth - 13 GHz versus 3 GHz, for the previous designs. An analytical model is created and is verified against the experimental data of the T-junctions. The model is then used to optimize the modulators and to achieve a design operating at above 35 GHz. The bandwidth increase with optical intensity is investigated in detectors. The unusual behavior is reproduced in Sentaurus. The severe depletion of the N and P regions is found to be responsible for the bandwidth variations. Increasing the doping of the P and N regions proves to successfully tackle the problem. === by Dinis Cheian. === M. Eng.
author2 Rajeev Ram.
author_facet Rajeev Ram.
Cheian, Dinis
author Cheian, Dinis
author_sort Cheian, Dinis
title T-junction resonant modulators and detectors in CMOS
title_short T-junction resonant modulators and detectors in CMOS
title_full T-junction resonant modulators and detectors in CMOS
title_fullStr T-junction resonant modulators and detectors in CMOS
title_full_unstemmed T-junction resonant modulators and detectors in CMOS
title_sort t-junction resonant modulators and detectors in cmos
publisher Massachusetts Institute of Technology
publishDate 2017
url http://hdl.handle.net/1721.1/112823
work_keys_str_mv AT cheiandinis tjunctionresonantmodulatorsanddetectorsincmos
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