T-junction resonant modulators and detectors in CMOS
Thesis: M. Eng., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2016. === This electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections. === Cataloged from student-s...
| Main Author: | |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | English |
| Published: |
Massachusetts Institute of Technology
2017
|
| Subjects: | |
| Online Access: | http://hdl.handle.net/1721.1/112823 |
| Summary: | Thesis: M. Eng., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2016. === This electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections. === Cataloged from student-submitted PDF version of thesis. === Includes bibliographical references (pages 128-131). === Design of optical modulators and detectors is investigated. A new design idea is proposed for optical modulators - T-junction. The T-junction allows to decouple the Extinction Ratio from the Bandwidth and to optimize each separately. Initial T-junction modulator provides an increase in bandwidth - 13 GHz versus 3 GHz, for the previous designs. An analytical model is created and is verified against the experimental data of the T-junctions. The model is then used to optimize the modulators and to achieve a design operating at above 35 GHz. The bandwidth increase with optical intensity is investigated in detectors. The unusual behavior is reproduced in Sentaurus. The severe depletion of the N and P regions is found to be responsible for the bandwidth variations. Increasing the doping of the P and N regions proves to successfully tackle the problem. === by Dinis Cheian. === M. Eng. |
|---|