Surface and mechanical stress effects in AlGaN/GaN high electron mobility transistors
Thesis: Ph. D., Massachusetts Institute of Technology, Department of Materials Science and Engineering, 2017. === Cataloged from PDF version of thesis. === Includes bibliographical references (pages 153-161). === Gallium Nitride (GaN) belongs to a class of materials called wide band-gap semiconducto...
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| Format: | Others |
| Language: | English |
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Massachusetts Institute of Technology
2017
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| Online Access: | http://hdl.handle.net/1721.1/111325 |