The density of localized gap states in amorphous silicon-nitrogen alloy films prepared by glow discharge
Main Author: | White, James Frederic |
---|---|
Published: |
2013
|
Online Access: | http://hdl.handle.net/1993/15496 |
Similar Items
-
The density of localized gap states in amorphous silicon-nitrogen alloy films prepared by glow discharge
by: White, James Frederic
Published: (2013) -
Electrical and optoelectronic properties of hydrogenated silicon films prepared by microwave glow-discharge
by: Schellenberg, John James
Published: (2013) -
Electrical and optoelectronic properties of hydrogenated silicon films prepared by microwave glow-discharge
by: Schellenberg, John James
Published: (2013) -
The effects of deposition parameters on hydrogenated amorphous silicon films fabricated by microwave glow discharge techniques
by: Mejia Zenteno, Sergio Ruperto Tadeo.
Published: (2014) -
A structural and spectroscopic study of glow-discharge hydrogenated amorphous silicon
by: Odeh, Ibrahim M.
Published: (1982)