The Design and Fabrication of Pentacene Acoustic Charge Transfer Devices
Acoustic charge transport (ACT) devices are used to transfer electrical signals by surface acoustic waves (SAW), which are generated by interdigital transducers (IDT) on piezoelectric crystal substrates. In order to reduce fabrication cost, pentacene ACT is desired to transfer charge packages becaus...
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ndltd-LSU-oai-etd.lsu.edu-etd-04012008-1017022013-01-07T22:51:32Z The Design and Fabrication of Pentacene Acoustic Charge Transfer Devices Shao, Hua Electrical & Computer Engineering Acoustic charge transport (ACT) devices are used to transfer electrical signals by surface acoustic waves (SAW), which are generated by interdigital transducers (IDT) on piezoelectric crystal substrates. In order to reduce fabrication cost, pentacene ACT is desired to transfer charge packages because of its reduced cost in. As some researchers reported, pentacene is a p type organic semiconductor, and can get high carrier mobility by growing in very pure crystalline structure under some specified growing conditions. In this project, charge transfer channel was made of crystal pentacene to form and carry the charge packages following SAW propagation. The pentacene ACT consists of IDT, input/output probes, metallic parabolic horns, and pentacene charge channel which are deposited on lithium niobate (LiNbO3) piezoelectric substrate. In addition, the frequency of SAW in this device was designed to be 284 MHz. IDT and probes were made by bilayer lift-off process, and the resolution is 3 ìm. The pentacene channel was deposited through a silicon shadow mask in thermal evaporator. Some facilities were designed for the above process, such as chromium glass masks, print out film mask, and LiNbO3 wafer holder. Semiconductor fabrication techniques such as photolithography and wet/dry etch were also involved in making this device. Another project, Gallium arsenide epitaxial film is also under consideration to be charge transfer channel in ACT. This project involved epitaxial film lift-off and wafer or film bonding technique. Further work will be required to produce this device. DooYoung Hah Ashok Srivastava R.Clive Woods LSU 2008-04-02 text application/pdf http://etd.lsu.edu/docs/available/etd-04012008-101702/ http://etd.lsu.edu/docs/available/etd-04012008-101702/ en unrestricted I hereby certify that, if appropriate, I have obtained and attached herein a written permission statement from the owner(s) of each third party copyrighted matter to be included in my thesis, dissertation, or project report, allowing distribution as specified below. I certify that the version I submitted is the same as that approved by my advisory committee. I hereby grant to LSU or its agents the non-exclusive license to archive and make accessible, under the conditions specified below and in appropriate University policies, my thesis, dissertation, or project report in whole or in part in all forms of media, now or hereafter known. I retain all other ownership rights to the copyright of the thesis, dissertation or project report. I also retain the right to use in future works (such as articles or books) all or part of this thesis, dissertation, or project report. |
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Electrical & Computer Engineering Shao, Hua The Design and Fabrication of Pentacene Acoustic Charge Transfer Devices |
description |
Acoustic charge transport (ACT) devices are used to transfer electrical signals by surface acoustic waves (SAW), which are generated by interdigital transducers (IDT) on piezoelectric crystal substrates. In order to reduce fabrication cost, pentacene ACT is desired to transfer charge packages because of its reduced cost in. As some researchers reported, pentacene is a p type organic semiconductor, and can get high carrier mobility by growing in very pure crystalline structure under some specified growing conditions. In this project, charge transfer channel was made of crystal pentacene to form and carry the charge packages following SAW propagation.
The pentacene ACT consists of IDT, input/output probes, metallic parabolic horns, and pentacene charge channel which are deposited on lithium niobate (LiNbO3) piezoelectric substrate. In addition, the frequency of SAW in this device was designed to be 284 MHz. IDT and probes were made by bilayer lift-off process, and the resolution is 3 ìm. The pentacene channel was deposited through a silicon shadow mask in thermal evaporator. Some facilities were designed for the above process, such as chromium glass masks, print out film mask, and LiNbO3 wafer holder. Semiconductor fabrication techniques such as photolithography and wet/dry etch were also involved in making this device.
Another project, Gallium arsenide epitaxial film is also under consideration to be charge transfer channel in ACT. This project involved epitaxial film lift-off and wafer or film bonding technique. Further work will be required to produce this device.
|
author2 |
DooYoung Hah |
author_facet |
DooYoung Hah Shao, Hua |
author |
Shao, Hua |
author_sort |
Shao, Hua |
title |
The Design and Fabrication of Pentacene Acoustic Charge Transfer Devices |
title_short |
The Design and Fabrication of Pentacene Acoustic Charge Transfer Devices |
title_full |
The Design and Fabrication of Pentacene Acoustic Charge Transfer Devices |
title_fullStr |
The Design and Fabrication of Pentacene Acoustic Charge Transfer Devices |
title_full_unstemmed |
The Design and Fabrication of Pentacene Acoustic Charge Transfer Devices |
title_sort |
design and fabrication of pentacene acoustic charge transfer devices |
publisher |
LSU |
publishDate |
2008 |
url |
http://etd.lsu.edu/docs/available/etd-04012008-101702/ |
work_keys_str_mv |
AT shaohua thedesignandfabricationofpentaceneacousticchargetransferdevices AT shaohua designandfabricationofpentaceneacousticchargetransferdevices |
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