A first principles investigation of device-to-device variability
In this thesis, we present first principles simulations to investigate the device-todevice variation induced by random discrete dopant (RDD) in Si nanoFET channels. Our simulations are from atomic first principles and parameter-free, by combining nonequilibrium Green's functions (NEGF) with the...
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| Format: | Others |
| Language: | en |
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McGill University
2014
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| Online Access: | http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=121532 |