A study of phototransistors.
A photoconductive diode can be constructed from a bar of semi-conducting material containing a region of p type conductivity and one of n type conductivity. However, a more sensitive device is realized if three regions are used alternately n,p,n. The npn structure, a phototransistor, provides a curr...
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| Format: | Others |
| Language: | en |
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McGill University
1956
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| Online Access: | http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=110202 |
| Summary: | A photoconductive diode can be constructed from a bar of semi-conducting material containing a region of p type conductivity and one of n type conductivity. However, a more sensitive device is realized if three regions are used alternately n,p,n. The npn structure, a phototransistor, provides a current approximately fifty times greater than that obtained from a pn photodiode illuminated by the same light source. Several of these npn units were constructed and the performance of each as a two-terminal phototransistor was evaluated. |
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