Mechanism of wet anisotropic etching of silicon for nano-scale applications

The fabrication processes of recent MEMS devices require the use of anisotropic etching and variety of concave structures. Analysis of these structures uncovered phenomenon in the etch rates of surfaces exposed by anisotropic etchant. This phenomenon could not be explained without consideration of...

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Bibliographic Details
Main Author: Stateikina, Irina
Format: Others
Published: 2007
Online Access:http://spectrum.library.concordia.ca/975298/1/NR30139.pdf
Stateikina, Irina <http://spectrum.library.concordia.ca/view/creators/Stateikina=3AIrina=3A=3A.html> (2007) Mechanism of wet anisotropic etching of silicon for nano-scale applications. PhD thesis, Concordia University.