Threshold Voltage Instability and Relaxation in Hydrogenated Amorphous Silicon Thin Film Transistors
This thesis presents a study of the bias-induced threshold voltage metastability phenomenon of the hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFTs). An application of gate bias stress shifts the threshold voltage of a TFT. After the bias stress is removed, the threshold volta...
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| Format: | Others |
| Language: | en |
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University of Waterloo
2006
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| Online Access: | http://hdl.handle.net/10012/769 |