Studies of Crystal Structure Using Multiphoton Transitions in GaAs

Studies of Crystal Structure Using Multiphoton Transitions in GaAs

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We demonstrate experimentally that the multiphoton ionization rate in gallium arsenide depends on the alignment of the laser polarization with respect to the crystal axis. We show real-time modulation of 1900nm laser ionization rate, through viewing transmission, which mimics the symmetry of the sem...

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Main Author: Golin, Sarah M
Language:en
Published: 2012
Subjects:
Multiphoton Ionization
Strong-field physics
solid state
ultrafast
Online Access:http://hdl.handle.net/10393/23369
id ndltd-LACETR-oai-collectionscanada.gc.ca-OOU-OLD.-23369
record_format oai_dc
spelling ndltd-LACETR-oai-collectionscanada.gc.ca-OOU-OLD.-233692013-04-05T03:21:38ZStudies of Crystal Structure Using Multiphoton Transitions in GaAsGolin, Sarah MMultiphoton IonizationStrong-field physicssolid stateultrafastWe demonstrate experimentally that the multiphoton ionization rate in gallium arsenide depends on the alignment of the laser polarization with respect to the crystal axis. We show real-time modulation of 1900nm laser ionization rate, through viewing transmission, which mimics the symmetry of the semiconductor crystal. We propose that the modulation in the ionization rate arises because the varying reduced effective carrier mass, as predicted by Keldysh theory. We show direct comparison of the experimental transmission modulation depth with that predicted by Keldysh theory. This opens up a novel method for real-time non-invasive crystallography of crystalline materials.2012-10-02T19:27:46Z2012-10-02T19:27:46Z20122012-10-02Thèse / Thesishttp://hdl.handle.net/10393/23369en
collection NDLTD
language en
sources NDLTD
topic Multiphoton Ionization
Strong-field physics
solid state
ultrafast
spellingShingle Multiphoton Ionization
Strong-field physics
solid state
ultrafast
Golin, Sarah M
Studies of Crystal Structure Using Multiphoton Transitions in GaAs
description We demonstrate experimentally that the multiphoton ionization rate in gallium arsenide depends on the alignment of the laser polarization with respect to the crystal axis. We show real-time modulation of 1900nm laser ionization rate, through viewing transmission, which mimics the symmetry of the semiconductor crystal. We propose that the modulation in the ionization rate arises because the varying reduced effective carrier mass, as predicted by Keldysh theory. We show direct comparison of the experimental transmission modulation depth with that predicted by Keldysh theory. This opens up a novel method for real-time non-invasive crystallography of crystalline materials.
author Golin, Sarah M
author_facet Golin, Sarah M
author_sort Golin, Sarah M
title Studies of Crystal Structure Using Multiphoton Transitions in GaAs
title_short Studies of Crystal Structure Using Multiphoton Transitions in GaAs
title_full Studies of Crystal Structure Using Multiphoton Transitions in GaAs
title_fullStr Studies of Crystal Structure Using Multiphoton Transitions in GaAs
title_full_unstemmed Studies of Crystal Structure Using Multiphoton Transitions in GaAs
title_sort studies of crystal structure using multiphoton transitions in gaas
publishDate 2012
url http://hdl.handle.net/10393/23369
work_keys_str_mv AT golinsarahm studiesofcrystalstructureusingmultiphotontransitionsingaas
_version_ 1716579653755338752

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