Positron annihilation investigation of electron irradiated silicon
Positron annihilation experiments which combine lifetime and doppler broadening measurements were performed using 10 MeV electron-irradiated Float-zone (Fz) and Czochralski silicon (Cz). In the case of irradiated float-zone Si, a lifetime of 305 ps is observed at 300 K decreasing from 290 ps at 30 K...
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| Language: | en_US |
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2007
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| Online Access: | http://hdl.handle.net/1993/819 |