Work function tuning of reactively sputtered MoxSiyNz metal gate electrodes for advanced CMOS technology
Due to continued transistor scaling, work function tuning of metal gates has become important for advanced CMOS applications. Specifically, this research has been undertaken to discover the tuning of the MoxSiyNz gate work function through the incorporation of nitrogen. Metal Oxide Semiconductor (MO...
Main Author: | Patel, Pommy |
---|---|
Other Authors: | Buchanan, Douglas (Electrical and Computer Engineering) |
Language: | en_US |
Published: |
2008
|
Subjects: | |
Online Access: | http://hdl.handle.net/1993/3048 |
Similar Items
-
Work function tuning of reactively sputtered MoxSiyNz metal gate electrodes for advanced CMOS technology
by: Patel, Pommy
Published: (2008) -
Work function tuning of reactively sputtered MoxSiyNz metal gate electrodes for advanced CMOS technology
by: Patel, Pommy
Published: (2008) -
Work function tuning of reactively sputtered HfxSiyNz metal gate electrodes for advanced CMOS technology
by: Chaudhari, Rekha
Published: (2013) -
Work function tuning of reactively sputtered HfxSiyNz metal gate electrodes for advanced CMOS technology
by: Chaudhari, Rekha
Published: (2013) -
Nanoscale electrode and dielectric materials, processes and interfaces to form thin-film tantalum capacitors for high-frequency applications
by: Chakraborti, Parthasarathi
Published: (2016)