Passivation kinetics at semiconductor interfaces
The interaction of atomic hydrogen with defects at a GaAs (100) surface was studied by continuously monitoring the photoluminescence of a GaAs wafer in a discharge-flow system at room temperature. It was found that there was an initial irreversible passivation of the surface in the presence of th...
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| Language: | English |
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2009
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| Online Access: | http://hdl.handle.net/2429/9969 |